N-Channel JFET
Low Noise Amplifier
CORPORATION
2N4338 – 2N4341
FEATURES
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +175
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
•
Exceptionally High Figure of Merit
•
Radiation Immunity
•
Extremely Low Noise and Capacitance
•
High Input Impedance
•
Low-level Choppers
•
Data Switches
•
Multiplexers and Low Noise Amplifiers
PIN CONFIGURATION
APPLICATIONS
ORDERING INFORMATION
Part
TO-18
Package
Hermetic TO-18
Sorted Chips in Carriers
Temperature Range
-55
o
C to +175
o
C
-55
o
C to +175
o
C
2N4338-41
X2N4338-41
G,C
5010
D
S
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
I
GSS
BV
GSS
V
GS(off)
I
D(off)
I
DSS
g
fs
g
os
r
DS(on)
C
iss
C
rss
PARAMETER
Gate Reverse Current
2N4338
2N4339
2N4340
2N4341
UNITS
MIN MAX MIN MAX MIN MAX MIN MAX
-0.1
-0.1
-0.1
-0.1
nA
T
A
= 150
o
C
-50
-0.3
-1
0.05
(-5)
0.2
0.6
0.5
-0.1
-50
-0.6
-1.8
0.05
(-5)
1.5
1.2
-0.1
-50
-1
-3
0.05
(-5)
3.6
3
-0.1
-50
-2
-6
0.07
(-10)
9
-0.1
µA
V
nA
(V)
mA
µS
ohm
pF
TEST CONDITIONS
V
GS
= -30V, V
DS
= 0
I
G
= -1µA, V
DS
= 0
V
DS
= 15V, I
D
= 0.1µA
V
DS
= 15V,
V
GS
= ( )
V
DS
= 15V, V
GS
= 0
V
DS
= 15V,
V
GS
= 0
V
DS
= 0, I
DS
= 0
V
DS
= 15V,
V
GS
= 0 (Note 1) f = 1MHz
V
DS
= 15V,
V
GS
= 0
R
gen
= 1meg,
BW = 200Hz
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Drain Cutoff Current
Saturation Drain Current (Note 2)
Common-Source Forward
Transconductance (Note 2)
Common-Source Output Conductance
Drain-Source ON Resistance
Common-Source Input Capacitance
Common-Source Reverse Transfer
Capacitance
Noise Figure (Note 1)
600 1800 800 2400 1300 3000 2000 4000
5
2500
7
3
15
1700
7
3
30
1500
7
3
60
800
7
3
f = 1kHz
NF
1
1
1
1
dB
f = 1kHz
NOTES: 1.
For design reference only, not 100% tested.
2.
Pulse test duration 2ms (non-JEDEC Condition).
Integrated technical exchanges
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