2N5061 datasheet, PDF - EEWORLD Datasheet

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2N5061: Description0.8 A, 60 V, SCR, TO-92; CategoryAnalog mixed-signal IC Trigger device; File Size141KB，3 Pages; ManufacturerCentral Semiconductor; Related ProductsFound11parts with similar functions to 2N5061

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2N5061 Overview

0.8 A, 60 V, SCR, TO-92

2N5061 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Nominal circuit commutation break time	10 µs
Configuration	SINGLE
Maximum DC gate trigger current	0.2 mA
Maximum DC gate trigger voltage	0.8 V
Maximum holding current	5 mA
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Maximum leakage current	0.01 mA
On-state non-repetitive peak current	10 A
Number of components	1
Number of terminals	3
Maximum on-state current	510 A
Maximum operating temperature	125 °C
Minimum operating temperature	-60 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	0.8 A
Off-state repetitive peak voltage	60 V
Repeated peak reverse voltage	60 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

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BRX44

BRX45

BRX46

BRX47

BRX48

BRX49

Central

Semiconductor Corp.

SILICON CONTROLLED RECTIFIER

0.8 AMP, 30 THRU 400 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BRX44 series

types are PNPN Silicon Controlled Rectifiers

manufactured in a TO-92 case, designed for control

systems and sensing circuit applications.

MARKING CODE: FULL PART NUMBER

TO-92 CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL

Peak Repetitive Off-State Voltage

RMS On-State Current (TC=40°C)

Average On-State Current (TC=40°C)

Nonrept. On-State Current (TC =60°C)

Fusing Current (t=10ms)

Peak Reverse Gate Voltage (IGR=10µA)

Peak Gate Current (t=10µs)

Peak Gate Dissipation (t=10µs)

Gate Dissipation (t=20ms)

Operating and Storage

Junction Temperature

Thermal Resistance

VDRM, VRRM

IT(RMS)

IT(AV)

ITSM

VGRM

IGM

PGM

PG (AV)

TJ, Tstg

BRX44 BRX45 BRX46 BRX47 BRX48 BRX49 UNITS

100

0.8

0.5

0.24

8.0

1.0

2.0

0.1

-40 to +125

100

200

300

400

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

IDRM,

VTM

IGT

VGT

dv/dt

di/dt

IRRM

Rated VDRM,

VRRM, RGK=1.0KΩ, TC=25°C

VRRM, RGK=1.0KΩ, TC=125°C

MIN

MAX

1.0

0.1

1.7

200

0.8

5.0

6.0

UNITS

µA

V/µs

A/µs

IT=1.0A

VD=6.0V, RL=10Ω

RGK=1.0KΩ

VD=0.67V x VDRM, RGK=1.0KΩ, TC=125°C

IG= 10mA, diG /dt=0.1A/µs, TC=125°C

100

R0 (27-April 2004)

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2N5061 Similar Products

Part Number	Manufacturer	Description
MCR103	Digitron	SILICON CONTROLLED RECTIFIERS
2N5061TRE	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 60V V(RRM), 1 Element, TO-92
2N5061TRELEADFREE	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 60V V(RRM), 1 Element, TO-92,
2N5061LEADFREE	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 60V V(DRM), 60V V(RRM), 1 Element, TO-92, PLASTIC PACKAGE-3
C205YY	Motorola ( NXP )	Silicon Controlled Rectifier, 1.2A I(T)RMS, 1200mA I(T), 60V V(DRM), 60V V(RRM), 1 Element, TO-226AA
2N5061RLRA	ON Semiconductor(安森美)	0.8A, 60V, SCR, TO-92, PLASTIC, CASE 29-11, TO-226AA, 3 PIN
2N5063	Central Semiconductor	0.8 A, 60 V, SCR, TO-92
2N5063TRE	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 150V V(RRM), 1 Element, TO-92
2N5063LEADFREE	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 150V V(DRM), 150V V(RRM), 1 Element, TO-92, PLASTIC PACKAGE-3
2N5063TRELEADFREE	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 150V V(RRM), 1 Element, TO-92,
EC103A	Littelfuse	Silicon Controlled Rectifier, 0.8A I(T)RMS, 800mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-92, TO-92, 3 PIN

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