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2N5062

Description
0.8 A, 60 V, SCR, TO-92
CategoryAnalog mixed-signal IC    Trigger device   
File Size141KB,3 Pages
ManufacturerCentral Semiconductor
Related ProductsFound20parts with similar functions to 2N5062
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2N5062 Overview

0.8 A, 60 V, SCR, TO-92

2N5062 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Nominal circuit commutation break time30 µs
ConfigurationSINGLE
Maximum DC gate trigger current0.2 mA
Maximum DC gate trigger voltage0.8 V
Maximum holding current5 mA
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Maximum leakage current0.01 mA
On-state non-repetitive peak current10 A
Number of components1
Number of terminals3
Maximum on-state current510 A
Maximum operating temperature125 °C
Minimum operating temperature-60 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current0.8 A
Off-state repetitive peak voltage100 V
Repeated peak reverse voltage100 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Base Number Matches1
BRX44
BRX45
BRX46
BRX47
BRX48
BRX49
Central
TM
Semiconductor Corp.
SILICON CONTROLLED RECTIFIER
0.8 AMP, 30 THRU 400 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BRX44 series
types are PNPN Silicon Controlled Rectifiers
manufactured in a TO-92 case, designed for control
systems and sensing circuit applications.
MARKING CODE: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=40°C)
Average On-State Current (TC=40°C)
Nonrept. On-State Current (TC =60°C)
Fusing Current (t=10ms)
Peak Reverse Gate Voltage (IGR=10µA)
Peak Gate Current (t=10µs)
Peak Gate Dissipation (t=10µs)
Gate Dissipation (t=20ms)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
VDRM, VRRM
IT(RMS)
IT(AV)
ITSM
I
2
t
VGRM
IGM
PGM
PG (AV)
TJ, Tstg
Θ
JC
Θ
JA
BRX44 BRX45 BRX46 BRX47 BRX48 BRX49 UNITS
30
60
100
0.8
0.5
10
0.24
8.0
1.0
2.0
0.1
-40 to +125
100
200
200
300
400
V
A
A
A
A
2
s
V
A
W
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
IDRM,
IDRM,
VTM
IGT
VGT
IH
IL
dv/dt
di/dt
IRRM
IRRM
Rated VDRM,
Rated VDRM,
VRRM, RGK=1.0KΩ, TC=25°C
VRRM, RGK=1.0KΩ, TC=125°C
MIN
MAX
1.0
0.1
1.7
200
0.8
5.0
6.0
UNITS
µA
mA
V
µA
V
mA
mA
V/µs
A/µs
IT=1.0A
VD=6.0V, RL=10Ω
VD=6.0V, RL=10Ω
RGK=1.0KΩ
RGK=1.0KΩ
VD=0.67V x VDRM, RGK=1.0KΩ, TC=125°C
IG= 10mA, diG /dt=0.1A/µs, TC=125°C
100
30
R0 (27-April 2004)

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