2N5064 datasheet, PDF - EEWORLD Datasheet

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2N5064: Description0.8 A, 200 V, SCR, TO-92; CategoryAnalog mixed-signal IC Trigger device; File Size141KB，3 Pages; ManufacturerCentral Semiconductor; Related ProductsFound20parts with similar functions to 2N5064

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2N5064 Overview

0.8 A, 200 V, SCR, TO-92

2N5064 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Nominal circuit commutation break time	30 µs
Configuration	SINGLE
Maximum DC gate trigger current	0.2 mA
Maximum DC gate trigger voltage	0.8 V
Maximum holding current	5 mA
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Maximum leakage current	0.01 mA
On-state non-repetitive peak current	10 A
Number of components	1
Number of terminals	3
Maximum on-state current	510 A
Maximum operating temperature	125 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	0.8 A
Off-state repetitive peak voltage	200 V
Repeated peak reverse voltage	200 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

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BRX44

BRX45

BRX46

BRX47

BRX48

BRX49

Central

Semiconductor Corp.

SILICON CONTROLLED RECTIFIER

0.8 AMP, 30 THRU 400 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BRX44 series

types are PNPN Silicon Controlled Rectifiers

manufactured in a TO-92 case, designed for control

systems and sensing circuit applications.

MARKING CODE: FULL PART NUMBER

TO-92 CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL

Peak Repetitive Off-State Voltage

RMS On-State Current (TC=40°C)

Average On-State Current (TC=40°C)

Nonrept. On-State Current (TC =60°C)

Fusing Current (t=10ms)

Peak Reverse Gate Voltage (IGR=10µA)

Peak Gate Current (t=10µs)

Peak Gate Dissipation (t=10µs)

Gate Dissipation (t=20ms)

Operating and Storage

Junction Temperature

Thermal Resistance

VDRM, VRRM

IT(RMS)

IT(AV)

ITSM

VGRM

IGM

PGM

PG (AV)

TJ, Tstg

BRX44 BRX45 BRX46 BRX47 BRX48 BRX49 UNITS

100

0.8

0.5

0.24

8.0

1.0

2.0

0.1

-40 to +125

100

200

300

400

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

IDRM,

VTM

IGT

VGT

dv/dt

di/dt

IRRM

Rated VDRM,

VRRM, RGK=1.0KΩ, TC=25°C

VRRM, RGK=1.0KΩ, TC=125°C

MIN

MAX

1.0

0.1

1.7

200

0.8

5.0

6.0

UNITS

µA

V/µs

A/µs

IT=1.0A

VD=6.0V, RL=10Ω

RGK=1.0KΩ

VD=0.67V x VDRM, RGK=1.0KΩ, TC=125°C

IG= 10mA, diG /dt=0.1A/µs, TC=125°C

100

R0 (27-April 2004)

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2N5064 Similar Products

Part Number	Manufacturer	Description
2N5064TRE	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(RRM), 1 Element, TO-92
2N5064TRF	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(RRM), 1 Element, TO-92
2N5064TRH	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(RRM), 1 Element, TO-92
2N5064APPLEADFREE	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(RRM), 1 Element, TO-92,
2N5064TRG	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(RRM), 1 Element, TO-92
2N5064TRB	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(RRM), 1 Element, TO-92
2N5064LEADFREE	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-92, PLASTIC PACKAGE-3
2N5064TRD	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(RRM), 1 Element, TO-92
2N5064TRC	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(RRM), 1 Element, TO-92
2N5064TRA	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(RRM), 1 Element, TO-92
2N5064APM	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(RRM), 1 Element, TO-92
2N5064TRELEADFREE	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(RRM), 1 Element, TO-92,
P0102BA	ST(意法半导体)	0.8A, 200V, SCR, TO-92
2N5064APP	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(RRM), 1 Element, TO-92
2N5064APMLEADFREE	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(RRM), 1 Element, TO-92,
2N5064-18	Motorola ( NXP )	0.8A, 200V, SCR, TO-226AA
2N5064-5	Motorola ( NXP )	Silicon Controlled Rectifier, 0.8A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-226AA
2N5064RLRA	ON Semiconductor(安森美)	SCRs 200V 800mA Thyristor
2N5064RLRM	ON Semiconductor(安森美)	SCRs 200V 800mA Thyristor
P0102BA1AA3	ST(意法半导体)	0.8 A, 400 V, SCR, TO-92

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