ADVANCED INFORMATION
MX69F162/164C3BT/B
16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM
MIXED MULTI CHIP PACKAGE MEMORY
FEATURES
• Supply voltage range: 2.7V to 3.6V
• Fast access time: Flash memory:70/90ns
SRAM memory:70/85ns
• Operation temperature range: -40 ~ 85° C
• Fully compatible with MX69F1602/1604C3T/B device
- Word write suspend to read
- Sector erase suspend to word write
- Sector erase suspend to read register report
• Automatic sector erase, word write and sector lock/
unlock configuration
• 100,000 minimum erase/program cycles
• Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Status Register feature for detection of program or
erase cycle completion
• Data protection performance
- Sectors to be locked/unlocked
• Common Flash Interface (CFI)
• 128-bit Protection Register
- 64-bit Unique Device Identifier
- 64-bit User-Programmable
• Latch-up protected to 100mA from -1V to VCC+1V
FLASH
• Word mode only
• VCCf=VCCQ=2.7V~3.6V for read, erase and program
operation
• VPP=12V for fast production programming
• Low power consumption
- 9mA typical active read current, f=5MHz
- 18mA typical program current (VPP=1.65~3.6V)
- 21mA typical erase current (VPP=1.65~3.6V)
- 7uA typical standby current under power saving mode
• Sector architecture
- Sector structure : 4Kword x 2 (boot sectors), 4Kword
x 6 (parameter sectors), 32Kword x 31 (main sectors)
- Top/Bottom Boot
• Auto Erase and Auto Program
- Automatically program and verify data at specified
address
- Auto sector erase at specified sector
• Automatic Suspend Enhance
SRAM
•
•
•
•
•
•
MX69F162C3BT/B: 128K wordx16 Bit
MX69F164C3BT/B: 256K wordx16 Bit
70mA maximum active current
1uA typical standby current
Data retention supply voltage: 2.0V~3.6V
Byte data control : LBs#(Q0 to Q7) and UBs#(Q8 to
Q15)
P/N:PM1083
REV. 0.2, MAY 20, 2004
1
MX69F162/164C3BT/B
GENERAL DESCRIPTION
The MXIC's mixed multi chip memory combines Flash
and SRAM into a single package. The mixed multi chip
memory operates 2.7 to 3.6V power supply to allow for
simple in-system operation.
The Flash memory of mixed multi chip memory manu-
factured with MXIC's advanced nonvolatile memory tech-
nology, the flash memory of mixed multi chip memory is
designed to be re-programmed and erased in system or
in standard EPROM programmers. The device offers
access times of 70ns/90ns, and 7uA typical standby
current.
Flash memories augment EPROM functionality with in-
circuit electrical erasure and programming and use a
command register to manage this functionality. The com-
mand register allows for 100% TTL level control inputs
and fixed power supply levels during erase and program-
ming, while maintaining maximum EPROM compatibil-
ity.
Flash memory reliably stores memory contents even af-
ter 100,000 erase and program cycles. The cell is de-
signed to optimize the erase and programming mecha-
nisms. In addition, the combination of advanced tunnel
oxide processing and low internal electric fields for erase
and program operations produces reliable cycling.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamperes on
address and data pin from -1V to VCC + 1V.
The dedicated VPP pin gives complete data protection
when VPP< VPPLK.
The Flash contains both a Command User Interface (CUI)
and a Write State Machine (WSM). A Command User
Interface (CUI) serves as the interface between the sys-
tem processor and internal operation of the device. A valid
command sequence written to the CUI initiates device
automation. An internal Write State Machine (WSM) au-
tomatically executes the algorithms and timings neces-
sary for erase, word write and sector lock/unlock configu-
ration operations.
Flash erase automation allows sector erase operation to
be executed using an industry-standard two-write com-
mand sequence to the CUI. A sector erase operation
erases one of the device's 32K-word sectors typically
within 1.0s, 4K-word sectors typically within 0.5s inde-
pendent of other sectors. Each sector can be indepen-
dently erased minimum 100,000 times. Sector erase
suspend mode allows system software to suspend sec-
tor erase to read or write data from any other sector.
Flash program automation allows program operation to
be executed using an industry-standard two-write com-
mand sequence to the CUI. Writing memory data is per-
formed in word increments of the device's 32K-word sec-
tors typically within 0.8s and 4K-word sectors typically
within 0.1s. Word program suspend mode enables the
system to read data or execute code from any other
memory array location.
The Flash features with individual sectors locking by
using a combination of thirty-nine sector lock-bits and
WP#, to lock and unlock sectors.
The Flash status register indicates the status of the WSM
when the sector erase, word program or lock configura-
tion operation is done.
The Flash power saving mode feature substantially re-
duces active current when the device is in static mode
(addresses not switching). In this mode, the typical ICCS
current is 7uA (CMOS) at 3.0V VCC. As CEf# and RE-
SET# are at VCC, ICC CMOS standby mode is enabled.
When RESET# is at GND, the reset mode is enabled
which minimize power consumption and provide data write
protection.
The Flash require a reset time (tPHQV) from RESET#
switching high until outputs are valid. Similarly, the flash
has a wake time (tPHEL) from RESET#-high until writes
to the CUI are recognized. With RESET# at GND, the
WSM is reset and the status register is cleared.
The 2M-bit SRAM of MX69F162C3BT/B is organized as
128K-word by 16-bit. The 4M-bit SRAM of
MX69F164C3BT/B is organized 256K-word by 16-bit. The
advanced CMOS technology and circuit techniques pro-
vide both high speed and low power features of with a
typical CMOS standby current of 1uA and maximum
access time of 70ns/85ns in 3V operation.
The mixed multi chip memory is available in 11mm x
8mm FBGA Package to suit a variety of design applica-
tions.
P/N:PM1083
REV. 0.2, MAY 20, 2004
2
MX69F162/164C3BT/B
PIN ASSIGNMENT
66-ball CSP for MX69F162/164C3BT/B
(Top View Balls Down, 11 x 8 x 1.4mm, Ball Pitch=0.8mm)
A
B
C
D
E
F
G
H
NC
NC
NC
A11
A15
A14
A13
A12
GNDf
VCCQ
NC
NC
A16
A8
A10
A9
Q15
WEs#
Q14
Q7
WEf#
NC
RES-
ET#
VPP
A19
Q11
Q13
Q6
Q4
Q5
GNDs
Q12
CE2s
VCCs
VCCf
WP#
Q10
Q2
Q3
8.0 mm
LBs#
UBs#
OEs#
Q9
Q8
Q0
Q1
A18
A17
A7
A6
A3
A2
A1
CE1
s#
NC
NC
NC
NC
NC
NC
A5
A4
A0
CEf#
GNDf
OEf#
1
2
3
4
5
6
7
11.0 mm
8
9
10
11
12
Notes:
1.To maintain compatibility with all JEDEC Variation B options for this ball location C6, this C6 land pad should be
connected directly to the land pad for ball G4 (A17).
PIN DESCRIPTION
SYMBOL
A0 to A16
A0 to A17
A17 to A19
A18 to A19
Q0 to Q15
CEf#
CE1s#
CE2s
OEf#
OEs#
PIN NAME
Address Inputs (Common) for
MX69F162C3BT/B
Address Inputs (Common) for
MX69F164C3BT/B
Address Input (Flash) for
MX69F162C3BT/B
Address Input (Flash) for
MX69F164C3BT/B
Data Inputs/Outputs (Common)
Chip Enable (Flash)
Chip Enable (SRAM)
Chip Enable (SRAM)
Output Enable (Flash)
Output Enable (SRAM)
SYMBOL
WEf#
WEs#
UBs#
LBs#
RESET#
WP#
N.C.
GND
VCCf
VCCs
VPP
VCCQ
PIN NAME
Write Enable (Flash)
Write Enable (SRAM)
Upper Byte Control (SRAM)
Lower Byte Control (SRAM)
Hardware Reset Pin/Deep Power
Down (Flash)
Write Protect
No Connection
Ground Pin (Common)
Power Supply (Flash, 2.7V~3.6V)
Power Supply (SRAM, 2.7V~3.6V)
Program/Erase Power Supply
(1.65V~3.6V or 11.4V~12.6V)
I/O Power Supply (Flash) tied to VCCf
P/N:PM1083
REV. 0.2, MAY 20, 2004
4
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