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2N5322

Description
2 A, 75 V, PNP, Si, POWER TRANSISTOR, TO-5
CategoryDiscrete semiconductor    The transistor   
File Size42KB,4 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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2N5322 Overview

2 A, 75 V, PNP, Si, POWER TRANSISTOR, TO-5

2N5322 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-39
package instructionMETAL, TO-39, 3 PIN
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)1.2 A
Collector-emitter maximum voltage75 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment10 W
Maximum power dissipation(Abs)10 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Maximum off time (toff)1000 ns
Maximum opening time (tons)100 ns
VCEsat-Max0.7 V
Base Number Matches1
2N5322
2N5323
SMALL SIGNAL PNP TRANSISTORS
s
s
s
SILICON EPITAXIAL PLANAR PNP
TRANSISTORS
MEDIUM POWER AMPLIFIER
NPN COMPLEMENTS ARE 2N5320 AND
2N5321
DESCRIPTION
The 2N5322 and 2N5323 are silicon epitaxial
planar PNP transistors in Jedec TO-39 metal
case. They are especially intended for
high-voltage medium power application in
industrial and commercial equipments.
The complementary NPN types are respectively
the 2N5320 and 2N5321
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
T
stg
, T
j
Parameter
2N5322
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (V
BE
= -1.5V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
amb
= 25 C
Total Dissipation at T
c
= 25 C
Storage and Junction Temperature
o
o
Value
2N5323
-75
-75
-50
-5
-1.2
-2
-1
1
10
-65 to 200
-100
-100
-75
-6
Unit
V
V
V
V
A
A
A
W
W
o
C
June 1997
1/4

2N5322 Related Products

2N5322 2N5323
Description 2 A, 75 V, PNP, Si, POWER TRANSISTOR, TO-5 MULTICOMP - 2N5323 - BIPOLAR TRANSISTOR; PNP; -50V TO-39
Is it Rohs certified? incompatible incompatible
Reach Compliance Code _compli _compli
ECCN code EAR99 EAR99
Maximum collector current (IC) 1.2 A 1.2 A
Collector-emitter maximum voltage 75 V 50 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 10 40
JEDEC-95 code TO-39 TO-39
JESD-30 code O-MBCY-W3 O-MBCY-W3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 200 °C 200 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power consumption environment 10 W 10 W
Maximum power dissipation(Abs) 10 W 10 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 50 MHz 50 MHz
Maximum off time (toff) 1000 ns 1000 ns
Maximum opening time (tons) 100 ns 100 ns
VCEsat-Max 0.7 V 1.2 V
Base Number Matches 1 1
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