2N5322
2N5323
SMALL SIGNAL PNP TRANSISTORS
s
s
s
SILICON EPITAXIAL PLANAR PNP
TRANSISTORS
MEDIUM POWER AMPLIFIER
NPN COMPLEMENTS ARE 2N5320 AND
2N5321
DESCRIPTION
The 2N5322 and 2N5323 are silicon epitaxial
planar PNP transistors in Jedec TO-39 metal
case. They are especially intended for
high-voltage medium power application in
industrial and commercial equipments.
The complementary NPN types are respectively
the 2N5320 and 2N5321
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
T
stg
, T
j
Parameter
2N5322
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (V
BE
= -1.5V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
amb
= 25 C
Total Dissipation at T
c
= 25 C
Storage and Junction Temperature
o
o
Value
2N5323
-75
-75
-50
-5
-1.2
-2
-1
1
10
-65 to 200
-100
-100
-75
-6
Unit
V
V
V
V
A
A
A
W
W
o
C
June 1997
1/4
2N5322/2N5323
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
17.5
175
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CBO
I
EBO
V
(BR)CEV
Parameter
Collector Cut-off
Current (I
E
= 0)
Collector Cut-off
Current (I
C
= 0)
Collector-Emitter
Breakdown Voltage
(V
BE
= 1.5V)
Test Conditions
V
CB
= -80 V
V
CB
= -60 V
V
EB
= -5 V
V
EB
= -4 V
I
C
= -100
µA
for
2N5322
for
2N5323
I
C
= -10 mA
for
2N5322
for
2N5323
I
E
= -100
µA
for
2N5322
for
2N5323
I
C
= -500 mA
for
2N5322
for
2N5323
I
C
= -500 mA
for
2N5322
for
2N5323
for
2N5322
I
C
= -500 mA
I
C
= -1 A
for
2N5323
I
C
= -500 mA
I
C
= -500 mA
I
B1
= -50 mA
I
B
= -50 mA
-0.7
-1.2
V
CE
= -4 V
-1.1
-1.4
V
CE
= -4 V
V
CE
= -2 V
V
CE
= -4 V
f = 10 MHz
V
CC
= -30 V
30
10
40
50
100
1000
130
V
V
V
V
for
2N5322
for
2N5323
for
2N5322
for
2N5323
-100
-75
-75
-50
-6
-5
-0.1
-0.5
Min.
Typ.
Max.
-0.5
-5
Unit
µA
µA
µA
µA
V
V
V
V
V
V
V
(BR)CEO
∗
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
V
CE(sat)
∗
V
BE
∗
h
FE
∗
DC Current Gain
250
MHz
ns
ns
f
T
t
on
t
off
Transition Frequency
Turn-on Time
Turn-off Time
I
C
= -50 mA V
CE
= -4 V
I
C
= -500 mA V
CC
= -30 V
I
B1
= -I
B2
= -50 mA
∗
Pulsed: Pulse duration = 300
µs,
duty cycle = 1 %
2/4
2N5322/2N5323
TO-39 MECHANICAL DATA
mm
DIM.
MIN.
A
B
D
E
F
G
H
I
L
5.08
1.2
0.9
45
o
(typ.)
12.7
0.49
6.6
8.5
9.4
0.200
0.047
0.035
TYP.
MAX.
MIN.
0.500
0.019
0.260
0.334
0.370
TYP.
MAX.
inch
G
I
H
D
A
L
F
E
B
P008B
3/4
2N5322/2N5323
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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