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2N5366

Description
500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size58KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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2N5366 Overview

500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

2N5366 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-92
package instructionTO-92, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Base Number Matches1
2N5366
2N5366
PNP General Purpose Amplifier
• This device is designed for general purpose amplifiers applications at
collector currents to 300mA.
• Sourced from process 68.
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
- Continuous
Operating and Storage Junction Temperature Range
Value
40
40
4.0
500
-55 ~ +150
Units
V
V
V
mA
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CES
I
EBO
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
= 10
µ
A
I
C
= 10
µ
A
V
CB
= 40V
V
CB
= 40V
V
EB
= 4.0V
V
CE
= 10V, I
C
= 2.0mA
V
CE
= 1.0V, I
C
= 50mA
V
CE
= 5.0V, I
C
= 300mA
I
C
= 50mA, I
B
= 2.5mA
I
C
= 300mA, I
B
= 30mA
I
C
= 50mA, I
B
= 2.5mA
I
C
= 300mA, I
B
= 30mA
V
CE
= 10V, I
C
= 2.0mA
V
CB
= 10V, f = 1MHz
V
CB
= 0.5V, f = 1MHz
V
CE
= 10V, I
C
= 2.0mA, f = 1MHz
80
450
0.5
80
100
40
I
C
= 10mA
Min.
40
40
4.0
100
100
10
300
0.25
1.0
1.1
2.0
0.8
8.0
35
V
pF
pF
V
Typ.
Max.
Units
V
V
V
nA
nA
µ
A
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
ob
C
ib
h
fe
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJA
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient
Parameter
Max.
625
5.0
200
Units
mW
mW/
°
C
°
C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, July 2002

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