2N5401 datasheet, PDF - EEWORLD Datasheet

2N5401: Description200 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92; CategoryDiscrete semiconductor The transistor; File Size166KB，2 Pages; ManufacturerMicro Electronics; Websitehttp://www.microelectr.com.hk

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200 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

Parameter Name	Attribute value
Maker	Micro Electronics
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	150 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.63 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

	2N5401	2N5400	2N5550	2N5551
Description	200 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92	COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS	NPN high-voltage transistors	600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown	unknow	unknown	unknown
Maximum collector current (IC)	0.6 A	0.6 A	0.6 A	0.6 A
Collector-emitter maximum voltage	150 V	120 V	140 V	160 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	60	40	60	80
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	NPN	NPN
Maximum power dissipation(Abs)	0.63 W	0.35 W	0.35 W	0.35 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz
Maker	Micro Electronics	-	Micro Electronics	Micro Electronics
ECCN code	EAR99	EAR99	-	EAR99
Base Number Matches	1	1	1	-

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