2N5550 datasheet, PDF - EEWORLD Datasheet

2N5550: DescriptionNPN high-voltage transistors; CategoryDiscrete semiconductor The transistor; File Size166KB，2 Pages; ManufacturerMicro Electronics; Websitehttp://www.microelectr.com.hk

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NPN high-voltage transistors

Parameter Name	Attribute value
Maker	Micro Electronics
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	140 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

	2N5550	2N5400	2N5401	2N5551
Description	NPN high-voltage transistors	COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS	200 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92	600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown	unknow	unknown	unknown
Maximum collector current (IC)	0.6 A	0.6 A	0.6 A	0.6 A
Collector-emitter maximum voltage	140 V	120 V	150 V	160 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	60	40	60	80
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	PNP	PNP	NPN
Maximum power dissipation(Abs)	0.35 W	0.35 W	0.63 W	0.35 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz
Maker	Micro Electronics	-	Micro Electronics	Micro Electronics
Base Number Matches	1	1	1	-
ECCN code	-	EAR99	EAR99	EAR99

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