MX26LV160BXEC-70 datasheet, PDF

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MX26LV160BXEC-70: Description16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY; Categorystorage storage; File Size709KB，48 Pages; ManufacturerMacronix; Websitehttp://www.macronix.com/en-us/Pages/default.aspx

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MX26LV160BXEC-70 Overview

16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY

MX26LV160BXEC-70 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Macronix
Parts packaging code	BGA
package instruction	LFBGA, BGA48,6X8,32
Contacts	48
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	70 ns
Other features	BOTTOM BOOT BLOCK
Spare memory width	8
startup block	BOTTOM
command user interface	YES
Data polling	YES
JESD-30 code	R-PBGA-B48
JESD-609 code	e0
length	8 mm
memory density	16777216 bi
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of departments/size	1,2,1,31
Number of terminals	48
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX16
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Encapsulate equivalent code	BGA48,6X8,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Programming voltage	3 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.3 mm
Department size	16K,8K,32K,64K
Maximum standby current	0.0001 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
type	NOR TYPE
width	6 mm

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MX26LV160

Macronix NBit

Memory Family

16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE

3V ONLY BOOT SECTOR HIGH SPEED eLiteFlash

MEMORY

FEATURES

• Extended single - supply voltage range 3.0V to 3.6V

• 2,097,152 x 8 / 1,048,576 x 16 switchable

• Single power supply operation

- 3.0V only operation for read, erase and program

operation

• Fast access time: 55/70ns

• Low power consumption

- 30mA maximum active current

- 30uA typical standby current

• Command register architecture

- Byte/word Programming (55us/70us typical)

- Sector Erase (Sector structure 16K-Bytex1,

8K-Bytex2, 32K-Bytex1, and 64K-Byte x31)

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors with

Erase verify capability.

- Automatically program and verify data at specified

address

• Status Reply

- Data# polling & Toggle bit for detection of program

and erase operation completion.

• Ready/Busy# pin (RY/BY#)

- Provides a hardware method of detecting program or

erase operation completion.

• 2,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

• Package type:

- 44-pin SOP

- 48-pin TSOP

- 48-ball CSP

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

• 20 years data retention

GENERAL DESCRIPTION

The MX26LV160 is a 16-mega bit high speed Flash

memory organized as 2M bytes of 8 bits or 1M words of

16 bits. MXIC's high speed Flash memories offer the

most cost-effective and reliable read/write non-volatile

random access memory. The MX26LV160 is packaged

in 44-pin SOP, 48-pin TSOP, and 48-ball CSP. It is de-

signed to be reprogrammed and erased in system or in

standard EPROM programmers.

The standard MX26LV160 offers access time as fast as

55ns, allowing operation of high-speed microprocessors

without wait states. To eliminate bus contention, the

MX26LV160 has separate chip enable (CE#) and output

enable (OE#) controls.

MXIC's high speed Flash memories augment EPROM

functionality with in-circuit electrical erasure and program-

ming. The MX26LV160 uses a command register to

manage this functionality. The command register allows

for 100% TTL level control inputs and fixed power sup-

ply levels during erase and programming, while main-

taining maximum EPROM compatibility.

MXIC high speed Flash technology reliably stores

memory contents even after 2,000 erase and program

cycles. The MXIC cell is designed to optimize the erase

and programming mechanisms. In addition, the combi-

nation of advanced tunnel oxide processing and low in-

ternal electric fields for erase and program operations

produces reliable cycling. The MX26LV160 uses a

3.0V~3.6V VCC supply to perform the High Reliability

Erase and auto Program/Erase algorithms.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamperes on

address and data pin from -1V to VCC + 1V.

P/N:PM1090

REV. 1.0, NOV. 08, 2004

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