MX26LV160ABXEC-70 datasheet, PDF

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MX26LV160ABXEC-70: Description16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY; Categorystorage storage; File Size754KB，61 Pages; ManufacturerMacronix; Websitehttp://www.macronix.com/en-us/Pages/default.aspx

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MX26LV160ABXEC-70 Overview

16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY

MX26LV160ABXEC-70 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Macronix
Parts packaging code	BGA
package instruction	LFBGA, BGA48,6X8,32
Contacts	48
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	70 ns
Other features	BOTTOM BOOT BLOCK
Spare memory width	8
startup block	BOTTOM
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PBGA-B48
JESD-609 code	e0
length	8 mm
memory density	16777216 bi
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of departments/size	1,2,1,31
Number of terminals	48
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX16
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Encapsulate equivalent code	BGA48,6X8,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Programming voltage	3 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.3 mm
Department size	16K,8K,32K,64K
Maximum standby current	0.0001 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
type	NOR TYPE
width	6 mm

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MX26LV160AT/AB

Macronix NBit

Memory Family

16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE

3V ONLY BOOT SECTOR HIGH SPEED eLiteFlash

MEMORY

FEATURES

• Extended single - supply voltage range 3.0V to 3.6V

• 2,097,152 x 8 / 1,048,576 x 16 switchable

• Single power supply operation

- 3.0V only operation for read, erase and program

operation

• Fast access time: 55/70ns

• Low power consumption

- 30mA maximum active current

- 30uA typical standby current

• Command register architecture

- Byte/word Programming (55us/70us typical)

- Sector Erase (Sector structure 16K-Bytex1,

8K-Bytex2, 32K-Bytex1, and 64K-Byte x31)

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors with

erase verify capability

- Automatically program and verify data at specified

address

• Status Reply

- Data# polling & Toggle bit for detection of program

and erase operation completion

• Ready/Busy# pin (RY/BY#)

- Provides a hardware method of detecting program or

erase operation completion

Sector protection

- Hardware method to disable any combination of

sectors from program or erase operations

- Temporary sector unprotect allows code changes in

previously locked sectors

CFI (Common Flash Interface) compliant

- Flash device parameters stored on the device and

provide the host system to access

2K minimum erase/program cycles

Latch-up protected to 100mA from -1V to VCC+1V

Boot Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

Package type:

- 44-pin SOP

- 48-pin TSOP

- 48-ball CSP

Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

20 years data retention

•

GENERAL DESCRIPTION

The MX26LV160AT/AB is a 16-mega bit high speed Flash

memory organized as 2M bytes of 8 bits or 1M words of

16 bits. MXIC's high speed Flash memories offer the

most cost-effective and reliable read/write non-volatile

random access memory. The MX26LV160AT/AB is pack-

aged in 44-pin SOP, 48-pin TSOP, and 48-ball CSP. It is

designed to be reprogrammed and erased in system or

in standard EPROM programmers.

The standard MX26LV160AT/AB offers access time as

fast as 55ns, allowing operation of high-speed micropro-

cessors without wait states. To eliminate bus conten-

tion, the MX26LV160AT/AB has separate chip enable

(CE#) and output enable (OE#) controls.

MXIC's high speed Flash memories augment EPROM

functionality with in-circuit electrical erasure and program-

ming. The MX26LV160AT/AB uses a command register

to manage this functionality. The command register al-

lows for 100% TTL level control inputs and fixed power

supply levels during erase and programming, while main-

taining maximum EPROM compatibility.

MXIC high speed Flash technology reliably stores

memory contents even after 2K erase and program

cycles. The MXIC cell is designed to optimize the erase

and programming mechanisms. In addition, the combi-

nation of advanced tunnel oxide processing and low in-

ternal electric fields for erase and program operations

produces reliable cycling. The MX26LV160AT/AB uses

a 3.0V~3.6V VCC supply to perform the High Reliability

Erase and auto Program/Erase algorithms.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamperes on

address and data pin from -1V to VCC + 1V.

P/N:PM1123

REV. 1.1, NOV. 18, 2004

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