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BS108

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size67KB,2 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BS108 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BS108 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSingle
Maximum drain current (Abs) (ID)0.23 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.83 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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