BS108-A datasheet, PDF - EEWORLD Datasheet

BS108-A: Description230mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92; CategoryDiscrete semiconductor The transistor; File Size136KB，1 Pages; ManufacturerDiodes Incorporated

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BS108-A Overview

230mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

Parameter Name	Attribute value
Maker	Diodes Incorporated
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
Is Samacsys	N
Configuration	SINGLE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	0.23 A
Maximum drain-source on-resistance	8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Transistor component materials	SILICON
Base Number Matches	1

	BS108-A	BS250-A	BS107-A
Description	230mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92	180mA, 45V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92	120mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
Maker	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown	unknown
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	200 V	45 V	200 V
Maximum drain current (ID)	0.23 A	0.18 A	0.12 A
Maximum drain-source on-resistance	8 Ω	14 Ω	28 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	P-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON

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