MCR100-3 - MCR100-8
Taiwan Semiconductor
Small Signal Product
CREAT BY ART
Thyristors
FEATURES
- Epitaxial planar die construction
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Packing code with suffix "G" means
Green compound (Halogen free)
TO-92
MECHANICAL DATA
- Case : TO-92 plastic package
- Terminal : Matte tin plated, lead free, solderable
per MIL-STD-202, method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Weight : 0.19 gram (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Forward Current RMS (All Conduction Angles）
MCR100-3
Peak Repetitive Forward and Reverse
Blocking Voltage（T
J
=25°C to 125°C，
R
GK
=1KΩ）
MCR100-4
MCR100-5
MCR100-6
MCR100-7
MCR100-8
Peak Forward Surge Current，T
A
=25°C
(1/2 Cycle，Sine Wave，60Hz）
Circuit Fusing Considerations（t= 8.3 ms）
Forward Peak Gate Power
（T
A
=25°C，PW≤1
μs）
Forward Average Gate Power（T
A
=25°C)
Forward Peak Gate Current（T
A
=25°C，PW≤1
μs）
Reverse Peak Gate Current（T
A
=25°C，PW
≤
1
μs）
Operating junction temperature range
Storage temperature range
Notes: 1. Valid provided that electrodes are kept at ambient temperature
PARAMETER
Peak Forward or Reverse Blocking Current
at V
AK
= Rated V
DRM
or V
RRM
Peak Forward On-State Voltage
at I
TM
=1A Peak, T
A
=25
o
C
Gate Trigger Current (Continous dc)
at Anode Voltage = 7 Vdc., R
L
=100Ω
Gate Trigger Current (Continous dc)
at Anode Voltage = 7 Vdc., R
L
=100Ω
at Anode Voltage = Rated V
DRM
, R
L
=100Ω)
Holding Current at Anode Voltage =7 Vdc, Initiating Current=20mA
I
H
-
5
mA
V
GT
-
0.8
V
SYMBOL
I
DRM
I
RRM
V
TM
I
GT
MIN
-
-
-
MAX
10
1.7
200
UNIT
μA
V
μA
I
TSM
I
2
t
P
GM
P
GF(AV)
I
GFM
V
GRM
T
J
T
STG
V
DRM
V
RRM
SYMBOL
I
T(RMS)
VALUE
0.8
100
200
300
400
500
600
10
0.415
0.1
0.01
1
5
-40 ~ +125
-40 ~ +150
A
A
2
s
W
W
A
V
°C
°C
V
UNIT
A
Document Number: DS_S1412032
Version: D15
MCR100-3 - MCR100-8
Taiwan Semiconductor
Small Signal Product
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
100
90
Gate Trigger Voltage(Volts)
-40
-25
-10
5
20
35
50
65
80
95
110
Gate Trigger Current (μA)
80
70
60
50
40
30
20
10
T
J
, Junction Temperature (
O
C)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40
-25
-10
5
20
35
50
65
80
95
110
T
J
. Junction Temperature (
O
C)
Fig. 1 Typical Gate Trigger Curent VS.
Junction Temperature
Fig. 2 Typical Gate Trigger Voltage
VS. Junction Temperature
1000
1000
Holding Current(μA)
Latching Current(μA)
100
100
10
-40
-25
-10
5
20
35
50
65
(
O
C)
80
95
110
10
-40
-25
-10
5
20
35
50
65
80
95
110
T
J
, Junction Temperature
T
J
, Junction Temperature (
O
C)
Fig. 4 Typical Lacthing Curent VS.
Junction Temperature
Fig. 3 Typical Holding Curent VS.
Junction Temperature
Fig. 5 Typical RMS Current Derating
120
T
C
, Maximum Allowable Case Temperature(
O
C)
110
100
90
80
70
60
50
40
0
0.1
0.2
0.3
0.4
0.5
I
T(RMS),
RMS On-State Current (AMPS)
30
O
C
60
O
C
90
O
C
120
O
C
DC
I
T
,Instantaneous On-State Current (A)
10
Fig. 6 Typical On-State Characteristics
Maximum @ T
J
=25
o
C
Maximum @ T
J
=110
o
C
180
O
C
1
0.1
0.5
0.8
1.1
1.4
1.7
2
2.3
2.6
2.9
3.2
3.5
V
T
,Instantaneous On-State Voltage (volts)
Document Number: DS_S1412032
Version: D15
CREAT BY ART
MCR100-3 - MCR100-8
Taiwan Semiconductor
Small Signal Product
ORDER INFORMATION (EXAMPLE)
MCR100‐3 A1G
Green compound code
Packing code
Part no.
PACKAGE OUTLINE DIMENSIONS
TO-92 (Ammo)
A
B
F
Unit (mm)
DIM.
A
B
Min
4.30
4.30
12.50
2.20
0.35
0.59
0.29
3.30
Max
5.10
4.70
-
2.80
0.55
1.40
0.51
4.10
Unit (inch)
Min
0.169
0.169
0.492
0.087
0.014
0.023
0.011
0.130
Max
0.201
0.185
-
0.110
0.022
0.055
0.020
0.161
C
C
D
E
E
D
H
G
F
G
H
TO-92 (Bulk)
DIM.
A
B
C
D
E
F
G
H
I
Unit (mm)
Min
4.30
4.30
12.50
1.17
0.35
1.17
0.59
0.29
3.30
Max
5.10
4.70
14.50
1.37
0.55
1.37
1.40
0.51
4.10
Unit (inch)
Min
0.169
0.169
0.492
0.046
0.014
0.046
0.023
0.011
0.130
Max
0.201
0.185
0.571
0.054
0.022
0.054
0.055
0.020
0.161
Document Number: DS_S1412032
Version: D15
CREAT BY ART
MCR100-3 - MCR100-8
Taiwan Semiconductor
Small Signal Product
MARKING DIAGRAM
x = Device P/N from 3~8
Document Number: DS_S1412032
Version: D15
MCR100-3 - MCR100-8
Taiwan Semiconductor
Small Signal Product
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_S1412032
Version: D15
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