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MCR100-6A1G

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size347KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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MCR100-6A1G Overview

Rectifier Diode

MCR100-6A1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Diode typeRECTIFIER DIODE
JESD-609 codee3
Humidity sensitivity level1
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Base Number Matches1
MCR100-3 - MCR100-8
Taiwan Semiconductor
Small Signal Product
CREAT BY ART
Thyristors
FEATURES
- Epitaxial planar die construction
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Packing code with suffix "G" means
Green compound (Halogen free)
TO-92
MECHANICAL DATA
- Case : TO-92 plastic package
- Terminal : Matte tin plated, lead free, solderable
per MIL-STD-202, method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Weight : 0.19 gram (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Forward Current RMS (All Conduction Angles)
MCR100-3
Peak Repetitive Forward and Reverse
Blocking Voltage(T
J
=25°C to 125°C,
R
GK
=1KΩ)
MCR100-4
MCR100-5
MCR100-6
MCR100-7
MCR100-8
Peak Forward Surge Current,T
A
=25°C
(1/2 Cycle,Sine Wave,60Hz)
Circuit Fusing Considerations(t= 8.3 ms)
Forward Peak Gate Power
(T
A
=25°C,PW≤1
μs)
Forward Average Gate Power(T
A
=25°C)
Forward Peak Gate Current(T
A
=25°C,PW≤1
μs)
Reverse Peak Gate Current(T
A
=25°C,PW
1
μs)
Operating junction temperature range
Storage temperature range
Notes: 1. Valid provided that electrodes are kept at ambient temperature
PARAMETER
Peak Forward or Reverse Blocking Current
at V
AK
= Rated V
DRM
or V
RRM
Peak Forward On-State Voltage
at I
TM
=1A Peak, T
A
=25
o
C
Gate Trigger Current (Continous dc)
at Anode Voltage = 7 Vdc., R
L
=100Ω
Gate Trigger Current (Continous dc)
at Anode Voltage = 7 Vdc., R
L
=100Ω
at Anode Voltage = Rated V
DRM
, R
L
=100Ω)
Holding Current at Anode Voltage =7 Vdc, Initiating Current=20mA
I
H
-
5
mA
V
GT
-
0.8
V
SYMBOL
I
DRM
I
RRM
V
TM
I
GT
MIN
-
-
-
MAX
10
1.7
200
UNIT
μA
V
μA
I
TSM
I
2
t
P
GM
P
GF(AV)
I
GFM
V
GRM
T
J
T
STG
V
DRM
V
RRM
SYMBOL
I
T(RMS)
VALUE
0.8
100
200
300
400
500
600
10
0.415
0.1
0.01
1
5
-40 ~ +125
-40 ~ +150
A
A
2
s
W
W
A
V
°C
°C
V
UNIT
A
Document Number: DS_S1412032
Version: D15

MCR100-6A1G Related Products

MCR100-6A1G MCR100-3 A1G MCR100-4 A1G MCR100-5 A1G MCR100-6 A1G MCR100-7 A1G MCR100-8 A1G MCR100-4A1G MCR100-5A1G
Description Rectifier Diode THYRISTOR-SCR, 100V, TO-92 THYRISTOR-SCR, 200V, TO-92 THYRISTOR-SCR, 300V, TO-92 THYRISTOR-SCR, 400V, TO-92 THYRISTOR-SCR, 500V, TO-92 THYRISTOR-SCR, 600V, TO-92 Rectifier Diode Rectifier Diode
Voltage - Off state - 100V 200V 300V 400V 500V 600V - -
Voltage - Gate Trigger (Vgt) (Maximum) - 800mV 800mV 800mV 800mV 800mV 800mV - -
Current - Gate Trigger (Igt) (maximum) - 200µA 200µA 200µA 200µA 200µA 200µA - -
Voltage - On State (Vtm) (Maximum) - 1.7V 1.7V 1.7V 1.7V 1.7V 1.7V - -
Current - On State (It (RMS)) (Maximum) - 800mA 800mA 800mA 800mA 800mA 800mA - -
Current - Hold (Ih) (maximum) - 5mA 5mA 5mA 5mA 5mA 5mA - -
Current - Off state (maximum) - 10µA 10µA 10µA 10µA 10µA 10µA - -
Current - Non-repetitive surge 50, 60Hz (Itsm) - 10A @ 60Hz 10A @ 60Hz 10A @ 60Hz 10A @ 60Hz 10A @ 60Hz 10A @ 60Hz - -
SCR type - Sensitive gate Sensitive gate Sensitive gate Sensitive gate Sensitive gate Sensitive gate - -
Operating temperature - -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ) - -
Installation type - Through hole Through hole Through hole Through hole Through hole Through hole - -
Package/casing - TO-226-3, TO-92-3 (TO-226AA) (formed lead) TO-226-3, TO-92-3 (TO-226AA) (formed lead) TO-226-3, TO-92-3 (TO-226AA) (formed lead) TO-226-3, TO-92-3 (TO-226AA) (formed lead) TO-226-3, TO-92-3 (TO-226AA) (formed lead) TO-226-3, TO-92-3 (TO-226AA) (formed lead) - -
Supplier device packaging - TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 - -
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