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MUR140-B

Description
SILICON, RECTIFIER DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size79KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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MUR140-B Overview

SILICON, RECTIFIER DIODE, DO-41

MUR140 - MUR160
1.0A SUPER-FAST RECTIFIER
Features
·
·
·
·
·
·
Glass Passivated Die Construction
Super-Fast Recovery Time For High Efficiency
Low Forward Voltage Drop and High Current Capability
Surge Overload Rating to 35A Peak
Ideally Suited for Automated Assembly
Lead Free Finish, RoHS Compliant (Note 5)
C
A
B
A
Mechanical Data
·
·
·
·
·
·
·
·
Case: DO-41
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
¾
Bright Tin. Solderable per
MIL-STD-202, Method 208
Marking: MUR140: R140
MUR160: R160
Polarity: Cathode Band
Mounting Position: Any
Weight: 0.35 grams (approximate)
Dim
A
B
C
D
D
DO-41 Plastic
Min
25.40
4.06
0.71
2.00
Max
¾
5.21
0.864
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
T
= 120°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage
Reverse Recovery Time (Note 2)
Reverse Recovery Time (Note 3)
Forward Recovery Time (Note 4)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
5.
@ T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
t
rr
t
fr
C
j
R
qJA
T
j
, T
STG
MUR140
400
283
1.0
35
1.25
1.05
5.0
150
50
75
50
45
72
-65 to +175
MUR160
600
424
Unit
V
V
A
A
V
mA
ns
ns
ns
pF
K/W
°C
@ I
F
= 1.0A, T
J
= 25°C
@ I
F
= 1.0A, T
J
= 150°C
@ T
A
= 25°C
@ T
A
= 150°C
Measured at 1.0MHz and applied reverse voltage of 0V DC.
Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See Figure 5.
Measured with I
F
= 1A, di/dt = 50A/us.
Measured with I
F
= 1.0A, di/dt = 100A/ms, Duty Cycle
£
2.0%.
RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
DS30112 Rev. 6 - 2
1 of 3
www.diodes.com
MUR140 - MUR160
ã
Diodes Incorporated

MUR140-B Related Products

MUR140-B MUR140 MUR140-A MUR140_1 MUR160 MUR160-T MUR160-B MUR160-A
Description SILICON, RECTIFIER DIODE, DO-41 SILICON, RECTIFIER DIODE, DO-41 SILICON, RECTIFIER DIODE, DO-41 SILICON, RECTIFIER DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 SILICON, RECTIFIER DIODE, DO-41 SILICON, RECTIFIER DIODE, DO-41

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