2N6274 datasheet, PDF - EEWORLD Datasheet

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2N6274: Description50 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA; CategoryDiscrete semiconductor The transistor; File Size89KB，6 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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2N6274 Overview

50 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA

2N6274 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	BFM
package instruction	TO-3, 2 PIN
Contacts	2
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum collector current (IC)	50 A
Collector-emitter maximum voltage	100 V
Configuration	Single
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	250 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
Base Number Matches	1

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by 2N6274/D

High-Power NPN Silicon

Transistors

. . . designed for use in industrial–military power amplifer and switching circuit

applications.

•

High Collector Emitter Sustaining —

VCEO(sus) = 100 Vdc (Min) — 2N6274

VCEO(sus)

= 120 Vdc (Min) — 2N6275

VCEO(sus)

= 150 Vdc (Min) — 2N6277

•

High DC Current Gain —

hFE = 30–120 @ IC = 20 Adc

hFE

= 10 (Min) @ IC = 50 Adc

•

Low Collector–Emitter Saturation Voltage —

VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc

•

Fast Switching Times @ IC 20 Adc

tr = 0.35

µs

(Max)

ts = 0.8

µs

(Max)

tf = 0.25

µs

(Max)

•

Complement to 2N6377–79

MAXIMUM RATINGS(1)

Rating

Collector–Base Voltage

Emitter–Base Voltage

2N6274

2N6275

2N6277*

*Motorola Preferred Device

50 AMPERE

POWER TRANSISTORS

NPN SILICON

100, 120, 140, 150 VOLTS

250 WATTS

PD, POWER DISSIPATION (WATTS)

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Symbol

VCB

VCEO

VEB

2N6274

120

100

2N6275

140

120

6.0

2N6277

180

150

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector Current — Continuous

Peak

Base Current

100

Total Device Dissipation @ TC = 25

Derate above 25

Operating and Storage Junction

Temperature Range

250

1.43

Watts

TJ, Tstg

– 65 to + 200

CASE 197A–05

TO–204AE

(TO–3)

THERMAL CHARACTERISTIC

Characteristic

Symbol

Max

0.7

Unit

Thermal Resistance, Junction to Case

(1) Indicates JEDEC Registered Data.

250

C/W

200

150

100

125

150

TC, CASE TEMPERATURE (°C)

175

200

Figure 1. Power Derating

Preferred

devices are Motorola recommended choices for future use and best overall value.

REV 7

Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data

2N6274 Related Products

	2N6274	2N6275	2N6277
Description	50 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA	50 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-204AA	50 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-204AA
Is it Rohs certified?	incompatible	incompatible	incompatible
Parts packaging code	BFM	BFM	BFM
package instruction	TO-3, 2 PIN	METAL, TO-3, 2 PIN	TO-3, 2 PIN
Contacts	2	2	2
Reach Compliance Code	_compli	not_compliant	_compli
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	50 A	50 A	50 A
Collector-emitter maximum voltage	100 V	120 V	150 V
Configuration	Single	SINGLE	Single
Minimum DC current gain (hFE)	30	10	30
JEDEC-95 code	TO-3	TO-204AE	TO-3
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
JESD-609 code	e0	e0	e0
Number of terminals	2	2	2
Maximum operating temperature	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	250 W	250 W	250 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz	30 MHz
Base Number Matches	1	-	1

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