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2N6275

Description
50 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-204AA
CategoryDiscrete semiconductor    The transistor   
File Size89KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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2N6275 Overview

50 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-204AA

2N6275 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeBFM
package instructionMETAL, TO-3, 2 PIN
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)50 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-204AE
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)250 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6274/D
High-Power NPN Silicon
Transistors
. . . designed for use in industrial–military power amplifer and switching circuit
applications.
High Collector Emitter Sustaining —
VCEO(sus) = 100 Vdc (Min) — 2N6274
VCEO(sus)
= 120 Vdc (Min) — 2N6275
VCEO(sus)
= 150 Vdc (Min) — 2N6277
High DC Current Gain —
hFE = 30–120 @ IC = 20 Adc
hFE
= 10 (Min) @ IC = 50 Adc
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc
Fast Switching Times @ IC 20 Adc
tr = 0.35
µs
(Max)
ts = 0.8
µs
(Max)
tf = 0.25
µs
(Max)
Complement to 2N6377–79
MAXIMUM RATINGS(1)
Rating
Collector–Base Voltage
Emitter–Base Voltage
2N6274
2N6275
2N6277*
*Motorola Preferred Device
50 AMPERE
POWER TRANSISTORS
NPN SILICON
100, 120, 140, 150 VOLTS
250 WATTS
PD, POWER DISSIPATION (WATTS)
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Symbol
VCB
VCEO
VEB
IC
IB
PD
2N6274
120
100
2N6275
140
120
6.0
2N6277
180
150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector Current — Continuous
Peak
Base Current
50
100
20
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
Operating and Storage Junction
Temperature Range
250
1.43
Watts
W/
_
C
TJ, Tstg
– 65 to + 200
CASE 197A–05
TO–204AE
(TO–3)
_
C
THERMAL CHARACTERISTIC
Characteristic
Symbol
θ
JC
Max
0.7
Unit
Thermal Resistance, Junction to Case
(1) Indicates JEDEC Registered Data.
250
_
C/W
200
150
100
50
0
0
25
50
100
125
150
75
TC, CASE TEMPERATURE (°C)
175
200
Figure 1. Power Derating
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 7
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1

2N6275 Related Products

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Description 50 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-204AA 50 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-204AA 50 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA
Is it Rohs certified? incompatible incompatible incompatible
Parts packaging code BFM BFM BFM
package instruction METAL, TO-3, 2 PIN TO-3, 2 PIN TO-3, 2 PIN
Contacts 2 2 2
Reach Compliance Code not_compliant _compli _compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 50 A 50 A 50 A
Collector-emitter maximum voltage 120 V 150 V 100 V
Configuration SINGLE Single Single
Minimum DC current gain (hFE) 10 30 30
JEDEC-95 code TO-204AE TO-3 TO-3
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
JESD-609 code e0 e0 e0
Number of terminals 2 2 2
Maximum operating temperature 200 °C 200 °C 200 °C
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 250 W 250 W 250 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 30 MHz 30 MHz 30 MHz
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