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Datasheet> All Categories > Discrete semiconductor> diode> RL3WK
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RL3WK

Description
Rectifier Diode, 1 Phase, 1 Element, 3.5A, Silicon,
CategoryDiscrete semiconductor    diode   
File Size27KB，1 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
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RL3WK Overview

Rectifier Diode, 1 Phase, 1 Element, 3.5A, Silicon,

RL3WK Parametric

Parameter NameAttribute value
MakerSANKEN
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
applicationULTRA FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current3.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

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Ultra-Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings
Parameter
Type No.
V
RM
(V)
I
F (AV)
(A)
I
FSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
Electrical Characteristics (Ta = 25°C)
Tstg
(°C)
V
F
(V)
max
I
F
(A)
I
R
I
R
(H)
(µA)
(µA)
V
R
= V
RM
V
R
= V
RM
max
Ta =100°C max
Others
Tj
(°C)
t
rr
Œ
(ns)
I
F
/
I
RP
(mA)
t
rr

(ns)
I
F
/
I
RP
(mA)
Rth (j- )
(°C/ W)
Mass
Fig.
(g)
RL 3Z
RL 3
RL 3A
200
3.5
350
600
2.0
60
80
0.95
3.5
–40 to +150 1.3
1.7
3.0
50
100
50
200
200
(Tj = 150°C)
200
(Tj = 150°C)
50 100/100
35
100/200
10
1.0
A
RL 3Z
5
I
F (AV)
(A)
Ta—I
F(AV)
Derating
20•20•1 t Cu
V
F
—I
F
Characteristics
(Typical)
50
I
FSM
(A)
I
FMS
Rating
80
I
FSM
(A)
20ms
10
Forward Current I
F
(A)
4
5mm
5mm
3
ith
W
1
Peak Forward Surge Current
60
Average Forward Current
40
2
0.1
1
Wi
tho
ut
He
ats
ink
T
a
= 150ºC
100ºC
25ºC
k
sin
at
He
0.01
20
0
0.001
0
25
50 60 75
100 125
Ambient Temperature Ta (°C)
150
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Forward Voltage V
F
(V)
0
1
5
10
Overcurrent Cycles
50
RL 3
5
I
F (AV)
(A)
Ta—I
F(AV)
Derating
20•20•1t Cu
V
F
—I
F
Characteristics
(Typical)
50
I
FSM
(A)
I
FMS
Rating
80
I
FSM
(A)
20ms
10
Forward Current I
F
(A)
4
5mm
5mm
3
W
ith
1
Peak Forward Surge Current
60
Average Forward Current
40
2
0.1
1
Wi
tho
ut
He
ats
ink
T
a
= 150ºC
100ºC
25ºC
at
He
sin
k
0.01
20
0
0.001
0
25
50 60 75
100 125
Ambient Temperature Ta (°C)
150
0
0.4
0.8
1.2
1.6
Forward Voltage V
F
(V)
2.0
0
1
5
10
Overcurrent Cycles
50
RL 3A
2.5
I
F (AV)
(A)
Ta—I
F(AV)
Derating
20•20•1t Cu
V
F
—I
F
Characteristics
(Typical)
I
FSM
(A)
I
FMS
Rating
60
50
40
30
20
10
I
FSM
(A)
20ms
20
10
Forward Current I
F
(A)
2.0
5mm
5mm
1
1.5
ith
W
0.1
1.0
T
a
= 150ºC
100ºC
60ºC
0.5
0.01
0
0.001
0
25
50 60 75
100 125
Ambient Temperature Ta (°C)
150
Peak Forward Surge Current
Average Forward Current
si
at
He
nk
0
0.5
1.0
1.5
2.0
2.5
Forward Voltage V
F
(V)
3.0
0
1
5
10
Overcurrent Cycles
50
External Dimensions
(Unit: mm)
Flammability:
UL94V-0 or Equivalent
Fig.
A
1.2
±0.05
Cathode Mark
62.5
±0.7
9.1
±0.2
5.2
±0.2
53

RL3WK Related Products

RL3WK RL3WS RL3AWK RL3AWS RL3ZWS RL3ZWK
Description Rectifier Diode, 1 Phase, 1 Element, 3.5A, Silicon, Rectifier Diode, 1 Phase, 1 Element, 3.5A, Silicon, Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon, Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon, Rectifier Diode, 1 Phase, 1 Element, 3.5A, Silicon, Rectifier Diode, 1 Phase, 1 Element, 3.5A, Silicon,
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
application ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 80 A 80 A 60 A 60 A 80 A 80 A
Number of components 1 1 1 1 1 1
Phase 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
Maximum output current 3.5 A 3.5 A 2 A 2 A 3.5 A 3.5 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs
surface mount NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Maker SANKEN SANKEN - - SANKEN SANKEN
Base Number Matches 1 1 1 1 - -

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