2N6564 datasheet, PDF - EEWORLD Datasheet

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2N6564: Description0.8 A, 60 V, SCR, TO-92; CategoryAnalog mixed-signal IC Trigger device; File Size141KB，3 Pages; ManufacturerCentral Semiconductor; Related ProductsFound20parts with similar functions to 2N6564

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2N6564 Overview

0.8 A, 60 V, SCR, TO-92

2N6564 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	_compli
ECCN code	EAR99
Configuration	SINGLE
Maximum DC gate trigger current	0.2 mA
Maximum DC gate trigger voltage	1.2 V
Maximum holding current	10 mA
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Maximum leakage current	0.1 mA
On-state non-repetitive peak current	6 A
Number of components	1
Number of terminals	3
Maximum on-state current	255 A
Maximum operating temperature	125 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	0.8 A
Off-state repetitive peak voltage	300 V
Repeated peak reverse voltage	300 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

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BRX44

BRX45

BRX46

BRX47

BRX48

BRX49

Central

TM

Semiconductor Corp.

SILICON CONTROLLED RECTIFIER

0.8 AMP, 30 THRU 400 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BRX44 series

types are PNPN Silicon Controlled Rectifiers

manufactured in a TO-92 case, designed for control

systems and sensing circuit applications.

MARKING CODE: FULL PART NUMBER

TO-92 CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL

Peak Repetitive Off-State Voltage

RMS On-State Current (TC=40°C)

Average On-State Current (TC=40°C)

Nonrept. On-State Current (TC =60°C)

Fusing Current (t=10ms)

Peak Reverse Gate Voltage (IGR=10µA)

Peak Gate Current (t=10µs)

Peak Gate Dissipation (t=10µs)

Gate Dissipation (t=20ms)

Operating and Storage

Junction Temperature

Thermal Resistance

VDRM, VRRM

IT(RMS)

IT(AV)

ITSM

I

2

t

VGRM

IGM

PGM

PG (AV)

TJ, Tstg

Θ

JC

Θ

JA

BRX44 BRX45 BRX46 BRX47 BRX48 BRX49 UNITS

30

60

100

0.8

0.5

10

0.24

8.0

1.0

2.0

0.1

-40 to +125

100

200

300

400

V

A

2

s

V

A

W

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

IDRM,

VTM

IGT

VGT

IH

IL

dv/dt

di/dt

IRRM

Rated VDRM,

VRRM, RGK=1.0KΩ, TC=25°C

VRRM, RGK=1.0KΩ, TC=125°C

MIN

MAX

1.0

0.1

1.7

200

0.8

5.0

6.0

UNITS

µA

mA

V

µA

V

mA

V/µs

A/µs

IT=1.0A

VD=6.0V, RL=10Ω

RGK=1.0KΩ

VD=0.67V x VDRM, RGK=1.0KΩ, TC=125°C

IG= 10mA, diG /dt=0.1A/µs, TC=125°C

100

30

R0 (27-April 2004)

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