C203C datasheet, PDF - EEWORLD Datasheet

C203C: DescriptionSILICON CONTROLLED RECTIFIER,300V V(DRM),800MA I(T),TO-92; CategoryAnalog mixed-signal IC Trigger device; File Size37KB，1 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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C203C Overview

SILICON CONTROLLED RECTIFIER,300V V(DRM),800MA I(T),TO-92

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
Nominal circuit commutation break time	15 µs
Critical rise rate of minimum off-state voltage	20 V/us
Maximum DC gate trigger current	0.2 mA
Maximum DC gate trigger voltage	0.8 V
Maximum holding current	5 mA
Maximum leakage current	0.001 mA
On-state non-repetitive peak current	8 A
Maximum on-state voltage	1.5 V
Maximum on-state current	800 A
Maximum operating temperature	125 °C
Minimum operating temperature	-60 °C
Off-state repetitive peak voltage	300 V
surface mount	NO
Trigger device type	SCR
Base Number Matches	1

	C203C	C203Y
Description	SILICON CONTROLLED RECTIFIER,300V V(DRM),800MA I(T),TO-92	SILICON CONTROLLED RECTIFIER,30V V(DRM),800MA I(T),TO-92
Reach Compliance Code	unknown	unknown
Nominal circuit commutation break time	15 µs	15 µs
Maximum DC gate trigger current	0.2 mA	0.2 mA
Maximum DC gate trigger voltage	0.8 V	0.8 V
Maximum holding current	5 mA	5 mA
Maximum leakage current	0.001 mA	0.001 mA
On-state non-repetitive peak current	8 A	8 A
Maximum on-state voltage	1.5 V	1.5 V
Maximum on-state current	800 A	800 A
Maximum operating temperature	125 °C	125 °C
Minimum operating temperature	-60 °C	-60 °C
Off-state repetitive peak voltage	300 V	30 V
surface mount	NO	NO
Trigger device type	SCR	SCR

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