MMBT7002 datasheet, PDF - EEWORLD Datasheet

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MMBT7002: DescriptionSmall Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size104KB，2 Pages; ManufacturerDIOTEC; Websitehttp://www.diotec.com/; Environmental Compliance

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MMBT7002 Overview

Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3

MMBT7002 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	DIOTEC
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.115 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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MMBT7002

Version 2011-02-01

Power dissipation – Verlustleistung

2.9

±0.1

0.4

1.3

1.1

N-Channel Enhancement Mode Field Effect Transistor

N-Kanal Feldeffekt Transistor - Anreicherungstyp

200 mW

SOT-23

(TO-236)

0.01 g

Type

Code

1.9

2.5 max

Plastic case

Kunststoffgehäuse

±0.1

Weight approx. – Gewicht ca.

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Dimensions - Maße [mm]

1=G

2=S

3=D

Maximum ratings (T

= 25°C)

Drain-Source-voltage – Drain-Source-Spannung

Drain-Gate-voltage – Drain-Gate-Spannung

Gate-Source-voltage – Gate-Source-Spannung

Power dissipation – Verlustleistung

Drain current continuos – Drainstrom (dc)

Peak Drain current – Drain-Spitzenstrom

Operating Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

≤ 1 MΩ

< 50 µs

DSS

DGR

GSS

tot

Grenzwerte (T

= 25°C)

MMBT7002

60 V

± 20 V

± 40 V

200 mW

115 mA

800 mA

150°C

-55…+150°C

http://www.diotec.com/

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