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MV1650

Description
DIODE 100 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-204AA, DO-7, 2 PIN, Variable Capacitance Diode
CategoryDiscrete semiconductor    diode   
File Size47KB,2 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

MV1650 Overview

DIODE 100 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-204AA, DO-7, 2 PIN, Variable Capacitance Diode

MV1650 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeDO-7
package instructionO-LALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Minimum breakdown voltage20 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio2
Nominal diode capacitance100 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JEDEC-95 codeDO-204AA
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)225
Maximum power dissipation0.4 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MV1626/D
Silicon Tuning Diodes
These epitaxial passivated tuning diodes are designed for AFC applications in
radio, TV, and general electronic–tuning.
Maximum Working Voltage of 20 V
Excellent Q Factor at High Frequencies
Solid–State Reliability to Replace Mechanical Tuning Methods
MV1626 thru
MV1650
6.8 – 100 pF
20 VOLTS
VOLTAGE–VARIABLE
CAPACITANCE DIODES
2
Anode
1
Cathode
2
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Device Dissipation @ TA = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
VR
IF
PD
TJ
Tstg
Characteristic
Reverse Breakdown Voltage
(IR = 10
µAdc)
Reverse Voltage Leakage Current
(VR = 15 Vdc, TA = 25°C)
Series Inductance
(f = 250 MHz, Lead Length
1/16″)
Case Capacitance
(f = 1.0 MHz, Lead Length
1/16″)
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Device
MV1626
MV1628
MV1630
MV1634
MV1638
MV1648
MV1650
Min
10.8
13.5
16.2
19.8
29.7
73.8
90.0
Nom
12.0
15.0
18.0
22.0
33.0
82.0
100.0
Max
13.2
16.5
19.8
24.2
36.3
90.2
110.0
Value
20
250
400
2.67
+175
– 65 to + 200
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
1
CASE 51–02
DO–204AA (DO–7)
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
V(BR)R
IR
LS
CC
Min
20
Typ
4.0
0.17
Max
0.10
Unit
Vdc
µAdc
nH
pF
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
Typ
300
250
250
250
200
150
150
TR, Tuning Ratio
C2/C20
f = 1.0 MHz
Min
2.0
2.0
2.0
2.0
2.0
2.0
2.0
Max
3.2
3.2
3.2
3.2
3.2
3.2
3.2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
1

MV1650 Related Products

MV1650 MV1628 MV1638 MV1648 MV1630
Description DIODE 100 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-204AA, DO-7, 2 PIN, Variable Capacitance Diode 15pF, 20V, SILICON, VARIABLE CAPACITANCE DIODE, DO-204AA, DO-7, 2 PIN 33pF, 20V, SILICON, VARIABLE CAPACITANCE DIODE, DO-204AA, DO-7, 2 PIN DIODE 82 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-204AA, DO-7, 2 PIN, Variable Capacitance Diode 18pF, 20V, SILICON, VARIABLE CAPACITANCE DIODE, DO-204AA, DO-7, 2 PIN
Maker ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Parts packaging code DO-7 DO-7 DO-7 DO-7 DO-7
package instruction O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 DO-7, 2 PIN
Contacts 2 2 2 2 2
Reach Compliance Code compliant compliant compliant unknown compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Minimum breakdown voltage 20 V 20 V 20 V 20 V 20 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode Capacitance Tolerance 10% 10% 10% 10% 10%
Minimum diode capacitance ratio 2 2 2 2 2
Nominal diode capacitance 100 pF 15 pF 33 pF 82 pF 18 pF
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JEDEC-95 code DO-204AA DO-204AA DO-204AA DO-204AA DO-204AA
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 2
Package body material GLASS GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum power dissipation 0.4 W 0.4 W 0.4 W 0.4 W 0.4 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL
Is it Rohs certified? incompatible incompatible incompatible - incompatible
JESD-609 code e0 e0 e0 - e0
Peak Reflow Temperature (Celsius) 225 225 225 - 225
Terminal surface TIN LEAD TIN LEAD TIN LEAD - TIN LEAD
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
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