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HYMR11632-840

Description
Rambus DRAM Module, 32MX16, 40ns, CMOS, RIMM-184
Categorystorage    storage   
File Size113KB,10 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric View All

HYMR11632-840 Overview

Rambus DRAM Module, 32MX16, 40ns, CMOS, RIMM-184

HYMR11632-840 Parametric

Parameter NameAttribute value
MakerSK Hynix
Parts packaging codeDMA
package instructionDIMM, DIMM184,40
Contacts84
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
access modeBLOCK ORIENTED PROTOCOL
Maximum access time40 ns
Other featuresSELF REFRESH
Maximum clock frequency (fCLK)800 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N184
memory density536870912 bit
Memory IC TypeRAMBUS DRAM MODULE
memory width16
Number of functions1
Number of ports1
Number of terminals84
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
organize32MX16
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM184,40
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply1.8/2.5,2.5 V
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)2.63 V
Minimum supply voltage (Vsup)2.37 V
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyCMOS
Terminal formNO LEAD
Terminal pitch1 mm
Terminal locationDUAL
Base Number Matches1
Direct Rambus
RIMM
Module
64 MBytes (32M x 16/18) based on 8Mx16/18
Overview
The Direct Rambus™ RIMM™ module is a general purpose
high-performance memory subsystem suitable for use in a
broad range of applications including computer memory,
personal computers, workstations, and other applications
where high bandwidth and low latency are required.
The 64MB Direct Rambus RIMM module consists of four
128M Direct Rambus DRAM (Direct RDRAM™ ) devices.
These are extremely high-speed CMOS DRAMs organized
as 8M words by 16 or 18 bits. The use of Rambus Signaling
Level (RSL) technology permits 600MHz / 711MHz /
800MHz transfer rates while using conventional system and
board design technologies. Direct RDRAM devices are
capable of sustained data transfers at 1.25 ns per two bytes
(10ns per sixteen bytes).
The architecture of the Direct RDRAM allows the highest
sustained bandwidth for multiple, simultaneous randomly
addressed memory transactions. The separate control and
data buses with independent row and column control yield
over 95% bus efficiency. The Direct RDRAM's thirty-two
banks support up to four simultaneous transactions.
Key Timing Parameters/Part Numbers
The following table lists the frequency and latency bins
available from RIMM modules. An optional -LP designator
is used to indicate low power modules.
Organization
32M x 16
32M x 16
32M x 16
32M x 16
32M x 16
32M x 18
32M x 18
32M x 18
32M x 18
32M x 18
I/O Freq. t
rac
(Row Access
MHz
Time) ns
600
711
711
800
800
600
711
711
800
800
53
50
45
45
40
53
50
45
45
40
Part Number
HYMR11632-653
HYMR11632-750
HYMR11632-745
HYMR11632-845
HYMR11632-840
HYMR11832-653
HYMR11832-750
HYMR11832-745
HYMR11832-845
HYMR11832-840
Form Factor
The Direct Rambus RIMM modules are offered in a 184-pin
1mm pin pitch form factor suitable for desktop and other
system applications.
Features
184-pin 1mm pin spacing
Card Size: 133.35mm x 31.75mm x 1.27mm
(5.25” x 1.25” x 0.050”)
64MB Direct RDRAM storage
Each RDRAM has 32banks, for 128banks total on
module
Gold plated contacts
RDRAMs use Chip Scale Package (CSP)
Serial Presence Detect support
Operates from a 2.5 volt supply (±5%)
Low power and powerdown self refresh modes
Separate Row and Column buses for higher efficiency
Rev. 0.0 /Feb. 99
1
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