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MRF557G

Description
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size149KB,5 Pages
ManufacturerADPOW
Websitehttp://www.advancedpower.com/
Environmental Compliance
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MRF557G Overview

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF557G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerADPOW
package instructionDISK BUTTON, O-PRDB-F4
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.5 A
Collector-based maximum capacity5.5 pF
Collector-emitter maximum voltage16 V
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeO-PRDB-F4
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF557
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
Specified @ 12.5 V, 870 MHz Characteristics
Output Power = 1.5 W
Minimum Gain = 8 dB
Efficiency 60% (Typ)
Cost Effective PowerMacro Package
Electroless Tin Plated Leads for Improved Solderability
MRF557G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
Power Macro
Designed primarily for wideband large signal stages in
the UHF frequency range.
DESCRIPTION:
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
16
30
3.0
500
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ TC = 75
°C
Derate above 75
°C
3.0
40
Watts
mW/
°C
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
Rev A 9/2005

MRF557G Related Products

MRF557G MRF557
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Is it Rohs certified? conform to incompatible
Maker ADPOW ADPOW
package instruction DISK BUTTON, O-PRDB-F4 DISK BUTTON, O-PRDB-F4
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 0.5 A 0.5 A
Collector-based maximum capacity 5.5 pF 5.5 pF
Collector-emitter maximum voltage 16 V 16 V
Configuration SINGLE SINGLE
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code O-PRDB-F4 O-PRDB-F4
Number of components 1 1
Number of terminals 4 4
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form DISK BUTTON DISK BUTTON
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location RADIAL RADIAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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