2N880 datasheet, PDF - EEWORLD Datasheet

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2N880: Description0.8 A, 60 V, SCR, TO-92; CategoryAnalog mixed-signal IC Trigger device; File Size141KB，3 Pages; ManufacturerCentral Semiconductor; Related ProductsFound18parts with similar functions to 2N880

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2N880 Overview

0.8 A, 60 V, SCR, TO-92

2N880 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	_compli
ECCN code	EAR99
Configuration	SINGLE
Maximum DC gate trigger current	0.2 mA
Maximum DC gate trigger voltage	0.8 V
Maximum holding current	5 mA
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Maximum leakage current	0.1 mA
On-state non-repetitive peak current	20 A
Number of components	1
Number of terminals	3
Maximum on-state current	350 A
Maximum operating temperature	100 °C
Minimum operating temperature	-60 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	0.8 A
Off-state repetitive peak voltage	150 V
Repeated peak reverse voltage	150 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

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BRX44

BRX45

BRX46

BRX47

BRX48

BRX49

Central

Semiconductor Corp.

SILICON CONTROLLED RECTIFIER

0.8 AMP, 30 THRU 400 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BRX44 series

types are PNPN Silicon Controlled Rectifiers

manufactured in a TO-92 case, designed for control

systems and sensing circuit applications.

MARKING CODE: FULL PART NUMBER

TO-92 CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL

Peak Repetitive Off-State Voltage

RMS On-State Current (TC=40°C)

Average On-State Current (TC=40°C)

Nonrept. On-State Current (TC =60°C)

Fusing Current (t=10ms)

Peak Reverse Gate Voltage (IGR=10µA)

Peak Gate Current (t=10µs)

Peak Gate Dissipation (t=10µs)

Gate Dissipation (t=20ms)

Operating and Storage

Junction Temperature

Thermal Resistance

VDRM, VRRM

IT(RMS)

IT(AV)

ITSM

VGRM

IGM

PGM

PG (AV)

TJ, Tstg

BRX44 BRX45 BRX46 BRX47 BRX48 BRX49 UNITS

100

0.8

0.5

0.24

8.0

1.0

2.0

0.1

-40 to +125

100

200

300

400

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

IDRM,

VTM

IGT

VGT

dv/dt

di/dt

IRRM

Rated VDRM,

VRRM, RGK=1.0KΩ, TC=25°C

VRRM, RGK=1.0KΩ, TC=125°C

MIN

MAX

1.0

0.1

1.7

200

0.8

5.0

6.0

UNITS

µA

V/µs

A/µs

IT=1.0A

VD=6.0V, RL=10Ω

RGK=1.0KΩ

VD=0.67V x VDRM, RGK=1.0KΩ, TC=125°C

IG= 10mA, diG /dt=0.1A/µs, TC=125°C

100

R0 (27-April 2004)

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2N880 Similar Products

Part Number	Manufacturer	Description
2N880LEADFREE	Central Semiconductor	Silicon Controlled Rectifier, 0.8A I(T)RMS, 150V V(RRM), 1 Element, TO-18
2N3027	Digitron	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 30; Max TMS Bridge Input Voltage: 0.5; Max DC Reverse Voltage: 0.0001; Capacitance: 5; Package: TO-18
2N2328	SSDI	Silicon Controlled Rectifier, 2.5A I(T)RMS, 1600mA I(T), 300V V(DRM), 1 Element, TO-5, TO-5, 3 PIN
2N6396	Advanced Semiconductor, Inc.	Silicon Controlled Rectifier, 5000mA I(T), 200V V(DRM)
2N6402	Toshiba(东芝)	SILICON CONTROLLED RECTIFIER,200V V(DRM),5A I(T),TO-220
C126F	Semitronics Corp	Silicon Controlled Rectifier, 12A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN
BT151X-650R,127	WeEn Semiconductors	Silicon Controlled Rectifier, 12A I(T)RMS, 650V V(DRM), 650V V(RRM), 1 Element, TO-220AB, PLASTIC, TO-220F, FULL PACK-3
2N1772A	SSDI	Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 100V V(DRM), 1 Element, TO-64, TO-64, 2 PIN
2N1776A	Advanced Semiconductor, Inc.	Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 300V V(DRM), 1 Element, TO-64, TO-64, 2 PIN
2N879	Advanced Semiconductor, Inc.	Silicon Controlled Rectifier, 0.55A I(T)RMS, 350mA I(T), 100V V(DRM), 1 Element, TO-18, TO-18, 3 PIN
2N1880	Digitron	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 200; Max TMS Bridge Input Voltage: 1.25; Max DC Reverse Voltage: 0.01; Capacitance: 3; Package: TO-5
C15F	Semitronics Corp	Silicon Controlled Rectifier, 8A I(T)RMS, 3000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element, TO-64
MCR718	Central Semiconductor	SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 400 THRU 600 VOLTS
2N2327	New Jersey Semiconductor	Thyristor SCR 250V 15A 3-Pin TO-39
C106E1	Central Semiconductor	4 A, 400 V, SCR, TO-202
2N1772	Semitronics Corp	Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-64
CS29-08IO1C	IXYS	Silicon Controlled Rectifier, 35A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, PLASTIC, ISOPLUS220, 3 PIN
S2025L	Littelfuse	SCRs 25A 200V

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