C106E1 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Analog mixed-signal IC> Trigger device> C106E1

C106E1: Description4 A, 400 V, SCR, TO-202; CategoryAnalog mixed-signal IC Trigger device; File Size579KB，4 Pages; ManufacturerCentral Semiconductor

Download Datasheet Parametric View All

C106E1 Overview

4 A, 400 V, SCR, TO-202

C106E1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	_compli
Is Samacsys	N
Nominal circuit commutation break time	40 µs
Configuration	SINGLE
Maximum DC gate trigger current	0.2 mA
Maximum DC gate trigger voltage	0.8 V
Maximum holding current	3 mA
JEDEC-95 code	TO-202
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Maximum leakage current	0.1 mA
On-state non-repetitive peak current	20 A
Number of components	1
Number of terminals	3
Maximum on-state current	4000 A
Maximum operating temperature	110 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	4 A
Off-state repetitive peak voltage	500 V
Repeated peak reverse voltage	500 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

Preview

Download Datasheet

View All

CS202-4B

CS202-4D

CS202-4M

CS202-4N

4.0 AMP SCR

200 THRU 800 VOLTS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CS202-4B series

type is an epoxy molded silicon controlled rectifier

designed for sensing circuit applications and control

systems.

MARKING: FULL PART NUMBER

TO-202 CASE

MAXIMUM RATINGS:

(TC=25°C unless otherwise noted)

Peak Repetitive Off-State Voltage

RMS On-State Current (TC=85°C)

Peak One Cycle Surge (t=10ms)

t Value for Fusing (t=10ms)

Peak Gate Power (tp=20μs)

Average Gate Power Dissipation

Peak Gate Current (tp=20μs)

Critical Rate of Rise of On-State Current

Storage Temperature

Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

IDRM, IRRM

IGT

VGT

VTM

dv/dt

SYMBOL

VDRM

VRRM

IT(RMS)

ITSM

PGM

PG(AV)

IGM

di/dt

Tstg

CS202

-4B

200

CS202

-4D

400

4.0

4.5

3.0

0.2

1.2

CS202

-4M

600

CS202

-4N

800

UNITS

A/μs

°C

°C/W

-40 to +150

-40 to +125

7.5

CHARACTERISTICS:

(TC=25°C unless otherwise noted)

TEST CONDITIONS

MIN

Rated VDRM, VRRM, RGK=1.0KΩ

Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C

VD=12V, RL=10Ω

IT=50mA, RGK=1.0KΩ

VD=12V, RL=10Ω

ITM=8.0A, tp=380μs

VD=

⅔

VDRM, RGK=1.0KΩ, TC=125°C

TYP

MAX

200

2.0

0.8

1.8

UNITS

μA

V/μs

0.25

0.55

1.6

R4 (23-January 2012)

Recommended Resources

Circuit design using TC35I wireless data transmission and GSM communication module

OTL circuit with bootstrap circuit added

Wired intercom telephone

One 55 one ten 150℃ digital thermometer circuit

Bidirectional thyristor dimming circuit

875p computer motherboard circuit diagram_025

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components