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SK312BF

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size554KB,4 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
Download Datasheet Parametric Compare View All

SK312BF Overview

Rectifier Diode,

SK312BF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionR-PDSO-F2
Reach Compliance Codecompliant
Is SamacsysN
Other featuresFREE WHEELING DIODE , LOW POWER LOSS
applicationEFFICIENCY
Minimum breakdown voltage120 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak forward current70 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage120 V
Maximum reverse current300 µA
Reverse test voltage120 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Base Number Matches1
SK32BF
THRU
SK320BF
Technical Data
Data Sheet N1688 Rev. A
SK32BF THRU SK320BF SCHOTTKY RECTIFIER
Features
Metal silicon junction, majority carrier conduction
For surface mounted applications
Low power loss, high efficiency
High forward surge current capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon
request
SMBF
Circuit Diagram
Mechanical Data
Case: SMBF
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.057g
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Maximum RMS voltage
Maximum Average Forward Rectified Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Max Instantaneous Forward Voltage at 2 A
Peak Reverse Current
@T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
@T
A
= 125°C
Typical Thermal Resistance Junction
to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V
RRM
V
DC
V
RMS
I
F(AV)
I
FSM
V
F
I
RM
R
θJA
T
J
, T
STG
0.55
0.5
5
/
50
-55 to +150
80
0.70
SK32 SK34 SK36 SK38 SK310 SK312 SK315 SK320
Units
BF
BF
BF
BF
BF
BF
BF
BF
20
14
40
28
60
42
80
56
3.0
70
0.85
0.3
/
5
0.95
100
70
120
84
150
105
200
140
V
V
A
A
V
mA
°C/W
°C
Note: 1. P.C.B. mounted with 0.5 X 0.5" (12.7 X 12.7 mm) copper pad areas.
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

SK312BF Related Products

SK312BF SK320BF SK38BF SK315BF SK34BF SK32BF
Description Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode,
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
package instruction R-PDSO-F2 R-PDSO-F2 SMBF, 2 PIN SMBF, 2 PIN SMBF, 2 PIN SMBF, 2 PIN
Reach Compliance Code compliant compliant compliant compliant compliant compliant
Other features FREE WHEELING DIODE , LOW POWER LOSS FREE WHEELING DIODE , LOW POWER LOSS FREE WHEELING DIODE , LOW POWER LOSS FREE WHEELING DIODE , LOW POWER LOSS FREE WHEELING DIODE , LOW POWER LOSS FREE WHEELING DIODE , LOW POWER LOSS
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Minimum breakdown voltage 120 V 200 V 80 V 150 V 40 V 20 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.85 V 0.95 V 0.7 V 0.95 V 0.55 V 0.55 V
JESD-30 code R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2
Maximum non-repetitive peak forward current 70 A 70 A 80 A 70 A 80 A 80 A
Number of components 1 1 1 1 1 1
Phase 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Maximum repetitive peak reverse voltage 120 V 200 V 80 V 150 V 40 V 20 V
Maximum reverse current 300 µA 300 µA 500 µA 300 µA 500 µA 500 µA
Reverse test voltage 120 V 200 V 80 V 150 V 40 V 20 V
surface mount YES YES YES YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Maker Sangdest Microelectronics (Nanjing) Co., Ltd. - Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd.
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