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PN2369AD26Z

Description
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size509KB,14 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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PN2369AD26Z Overview

Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

PN2369AD26Z Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH SPEED SATURATED SWITCHING
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)18 ns
Maximum opening time (tons)12 ns
Base Number Matches1
PN2369A / MMBT2369A
PN2369A
MMBT2369A
C
E
C
B
TO-92
E
SOT-23
Mark: 1S
B
NPN Switching Transistor
This device is designed for high speed saturated switching at collector
currents of 10 mA to 100 mA. Sourced from Process 21.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
15
40
4.5
200
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PN2369A
350
2.8
125
357
Max
MMBT2369A*
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation

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Description Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 trans GP npn 15v 200ma TO-92 trans GP npn 15v 200ma TO-92 trans GP npn 15v 200ma TO-92 Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN Transistor, Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 Transistor, Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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Reach Compliance Code compliant - - - compliant compliant compliant compliant compliant compliant
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