PN2369A / MMBT2369A
PN2369A
MMBT2369A
C
E
C
B
TO-92
E
SOT-23
Mark: 1S
B
NPN Switching Transistor
This device is designed for high speed saturated switching at collector
currents of 10 mA to 100 mA. Sourced from Process 21.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
15
40
4.5
200
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PN2369A
350
2.8
125
357
Max
MMBT2369A*
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
PN2369A / MMBT2369A
NPN Switching Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
Collector-Emitter Breakdown Voltage*
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
µA,
V
BE
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 20 V, I
E
= 0
V
CB
= 20 V, I
E
= 0, T
A
= 125°C
15
40
40
4.5
0.4
30
V
V
V
V
µA
µA
ON CHARACTERISTICS
h
FE
DC Current Gain*
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 10 mA,V
CE
= 0.35 V,T
A
=-55°C
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 10 mA, I
B
= 1.0 mA,T
A
=125°C
I
C
= 30 mA, I
B
= 3.0 mA
I
C
= 100 mA, I
B
= 10 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 10 mA, I
B
= 1.0 mA,T
A
= -55°C
I
C
= 10 mA, I
B
= 1.0 mA,T
A
= 125°C
I
C
= 30 mA, I
B
= 3.0 mA
I
C
= 100 mA, I
B
= 10 mA
40
20
20
120
V
CE(
sat
)
Collector-Emitter Saturation Voltage*
V
BE(
sat
)
Base-Emitter Saturation Voltage
0.7
0.59
0.2
0.3
0.25
0.5
0.85
1.02
1.15
1.6
V
V
V
V
V
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
C
obo
C
ibo
h
fe
Output Capacitance
Input Capacitance
Small-Signal Current Gain
V
CB
= 5.0 V, I
E
= 0, f = 1.0 MHz
V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz
I
C
= 10 mA, V
CE
= 10 V,
R
G
= 2.0 kΩ, f = 100 MHz
5.0
4.0
5.0
pF
pF
SWITCHING CHARACTERISTICS
t
s
t
on
t
off
Storage Time
Turn-On Time
Turn-Off Time
I
B1
= I
B2
= I
C
= 10 mA
V
CC
= 3.0 V, I
C
= 10 mA,
I
B1
= 3.0 mA
V
CC
= 3.0 V, I
C
= 10 mA,
I
B1
= 3.0 mA, I
B2
= 1.5 mA
13
12
18
ns
ns
ns
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
Spice Model
NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p
Itf=.3 Vtf=4 Xtf=4 Rb=10)
PN2369A / MMBT2369A
NPN Switching Transistor
(continued)
Typical Characteristics
200
- DC CURRENT GAIN
V
CESAT
- COLLE CTOR-EMITTER VOLTAGE (V)
DC Current Gain
vs Collector Current
V
C E
= 1.0V
150
125 ° C
Collector-Emitter Saturation
Voltage vs Collector Current
0.5
0.4
0.3
25 °C
β
= 10
100
25 ° C
0.2
0.1
0
0.1
- 40 °C
125 °C
FE
50
- 40 °C
h
0.01
I
C
0.1
1
10
- COLLECTOR CURRENT (mA)
100
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
V
BE(O N)
- BASE-E MITTER ON VOLTAGE (V)
V
BESAT
- BASE-EMITTER VOLTAG E (V)
Base-Emitter Saturation
Voltage vs Collector Current
1.4
1.2
1
0.8
0.6
0.4
0.1
I
C
- 40 °C
Base-Emitter ON Voltage vs
Collector Current
1
- 40°C
β
= 10
0.8
25 °C
125 °C
0.6
25 °C
125 °C
0.4
V
CE
= 1.0V
1
10
100
- COLLE CTOR CURRENT ( mA)
300
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
600
V
CB
= 20V
100
10
1
25
50
75
100
125
T
A
- AMBIENT TE MPERATURE (
°
C)
150
PN2369A / MMBT2369A
NPN Switching Transistor
(continued)
Typical Characteristics
(continued)
Output Capacitance vs
Reverse Bias Voltage
5
100
Switching Times vs
Collector Current
SWITCHING TIMES (ns)
50
20
t
s
r
10
5
2
1
2
t
s
f
t
s
s
V
CC
= 3.0 V
I
C
= 10 I
B1
= I
B2
= 10
F = 1.0MHz
CAPACITANCE (pF)
4
3
C
obo
C
ibo
2
1
0
0.1
t
d
s
5
10
20
50
100
I
C
- COLLECTOR CURRENT (mA)
0.5
1
5
10
REVERSE BIAS VOLTAGE (V)
50
300
I
B2
- TURN OFF BASE CURRENT (mA)
Switching Times vs
Ambient Temperature
12
t
s
f
S WITCHING TIMES ( ns)
10
8
6
t
sd
4
2
0
25
T
A
Storage Time vs Turn On
and Turn Off Base Currents
-12
-10
-8
t
s
= 3.0 ns
-6
-4
-2
0
4.0 ns
I
C
= 10 mA
V
CC
= 3.0 V
t
s
s
t
sr
I
C
= 10 mA, I
B1
= 3.0 mA, I
B2
= 1.5 mA, V
CC
= 3.0 V
50
75
- AMBIENT TE MPERATURE (
°
C)
100
6.0 ns
0
2
4
6
8
I
B1
- TURN ON BASE CURRENT (mA)
10
I
B2
- TURN OFF BASE CURRENT (mA)
-12
-10
-8
I
B2
- TURN OFF BASE CURRENT (mA)
Storage Time vs Turn On
and Turn Off Base Currents
I
C
= 10 mA
V
CC
= 3.0 V
Storage Time vs Turn On
and Turn Off Base Currents
-30
-25
-20
-15
-10
-5
0
16.0 ns
I = 100 mA
C
V
CC
= 3.0 V
t
S
= 3.0 ns
4.0 ns
8.0 ns
6.0 ns
t
s
= 3.0 ns
-6
-4
-2
0
4.0 ns
6.0 ns
0
2
4
6
8
I
B1
- TURN ON BASE CURRENT (mA)
10
0
5
10
15
20
25
I
B1
- TURN ON BASE CURRENT (mA)
30
PN2369A / MMBT2369A
NPN Switching Transistor
(continued)
Typical Characteristics
(continued)
I
B2
- TURN OFF BASE CURRENT (mA)
-6
-5
-4
I
B2
- TURN OFF BASE CURRENT (mA)
Fall Time vs Turn On
and Turn Off Base Currents
I
C
= 10 mA
V
CC
= 3.0 V
8.0 ns
Fall Time vs Turn On
and Turn Off Base Currents
-12
-10
-8
-6
-4
-2
0
I
C
= 30 mA
V
CC
= 3.0 V
t
f
= 2.0 ns
5.0 ns
3.0 ns
4.0 ns
t
f
= 7.0 ns
-3
-2
-1
0
10 ns
0
2
I
B1
4
6
8
- TURN ON BASE CURRENT (mA)
10
0
2
4
6
8
10
I
B1
- TURN ON BASE CURRENT (mA)
12
-30
-25
-20
-15
-10
-5
0
V
BE(O)
- BASE-EMITTER OFF VOLTAGE (V)
I
B2
- TURN OFF BASE CURRENT (mA)
Fall Time vs Turn On
and Turn Off Base Currents
I
C
= 100 mA
V
CC
= 3.0 V
t
f
= 2.0 ns
3.0 ns
4.0 ns
Delay Time vs Base-Emitter OFF
Voltage and Turn On Base Current
-6
-5
-4
-3
-2
-1
0
3.0 ns
5.0 ns
4.0 ns
I
C
= 10 mA
V
CC
= 3.0 V
t
d
= 8.0 ns
8.0 ns
12.0 ns
0
5
I
B1
10
15
20
25
- TURN ON BASE CURRENT (mA)
30
1
2
5
10
20
I
B1
- TURN ON BASE CURRENT (mA)
50
- TURN ON BASE CURRENT (mA)
Rise Time vs. Turn On Base
Current and Collector Current
V
CC
= 3.0 V
t
r
= 2.0 ns
5.0 ns
Power Dissipation vs
Ambient Temperature
P
D
- POW ER DISSIPATION (mW)
500
400
300
200
50
10
TO-92
1
10 ns
20 ns
SOT-23
100
0
B1
0
1
10
100
I
C
- COLLE CTOR CURRENT (mA)
500
0
25
50
75
100
TE MPE RATURE (
°
C)
125
150
I
京公网安备 11010802033920号
EEWORLD
