DS1230AB-IND datasheet, PDF - EEWORLD Datasheet

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DS1230AB-IND: DescriptionNon-Volatile SRAM Module, 32KX8, 200ns, CMOS,; Categorystorage storage; File Size38KB，1 Pages; ManufacturerDALLAS; Websitehttp://www.dalsemi.com

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DS1230AB-IND Overview

Non-Volatile SRAM Module, 32KX8, 200ns, CMOS,

DS1230AB-IND Parametric

Parameter Name	Attribute value
Maker	DALLAS
Reach Compliance Code	unknown
Is Samacsys	N
Maximum access time	200 ns
Other features	BATTERY BACK-UP
JESD-30 code	R-XDMA-N28
memory density	262144 bit
Memory IC Type	NON-VOLATILE SRAM MODULE
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	32KX8
Exportable	YES
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	NO LEAD
Terminal location	DUAL
Base Number Matches	1

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DS1230AB-IND Related Products

	DS1230AB-IND	DS1230YP	DS1230YP-IND	DS1230ABP-IND	DS1230ABP	DS1230Y-IND
Description	Non-Volatile SRAM Module, 32KX8, 200ns, CMOS,	Non-Volatile SRAM Module, 32KX8, 70ns, CMOS,	Non-Volatile SRAM Module, 32KX8, 70ns, CMOS,	Non-Volatile SRAM Module, 32KX8, 70ns, CMOS,	Non-Volatile SRAM Module, 32KX8, 70ns, CMOS,	Non-Volatile SRAM Module, 32KX8, 200ns, CMOS,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	200 ns	70 ns	70 ns	70 ns	70 ns	200 ns
Other features	BATTERY BACK-UP	10 YEARS OF DATA RETENTION PERIOD	10 YEARS OF DATA RETENTION PERIOD	10 YEARS OF DATA RETENTION PERIOD	10 YEARS OF DATA RETENTION PERIOD	BATTERY BACK-UP
JESD-30 code	R-XDMA-N28	R-XDMA-N34	R-XDMA-N34	R-XDMA-N34	R-XDMA-N34	R-XDMA-N28
memory density	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit
Memory IC Type	NON-VOLATILE SRAM MODULE	NON-VOLATILE SRAM MODULE	NON-VOLATILE SRAM MODULE	NON-VOLATILE SRAM MODULE	NON-VOLATILE SRAM MODULE	NON-VOLATILE SRAM MODULE
memory width	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1
Number of terminals	28	34	34	34	34	28
word count	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words
character code	32000	32000	32000	32000	32000	32000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	70 °C	85 °C	85 °C	70 °C	85 °C
Minimum operating temperature	-40 °C	-	-40 °C	-40 °C	-	-40 °C
organize	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum supply voltage (Vsup)	5.25 V	5.5 V	5.5 V	5.25 V	5.25 V	5.5 V
Minimum supply voltage (Vsup)	4.75 V	4.5 V	4.5 V	4.75 V	4.75 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maker	DALLAS	DALLAS	DALLAS	-	-	DALLAS
Base Number Matches	1	1	1	1	1	-

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