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DS1230ABP

Description
Non-Volatile SRAM Module, 32KX8, 70ns, CMOS,
Categorystorage    storage   
File Size38KB,1 Pages
ManufacturerDALLAS
Websitehttp://www.dalsemi.com
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DS1230ABP Overview

Non-Volatile SRAM Module, 32KX8, 70ns, CMOS,

DS1230ABP Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Maximum access time70 ns
Other features10 YEARS OF DATA RETENTION PERIOD
JESD-30 codeR-XDMA-N34
memory density262144 bit
Memory IC TypeNON-VOLATILE SRAM MODULE
memory width8
Number of functions1
Number of terminals34
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32KX8
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum supply voltage (Vsup)5.25 V
Minimum supply voltage (Vsup)4.75 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal locationDUAL
Base Number Matches1

DS1230ABP Related Products

DS1230ABP DS1230YP DS1230YP-IND DS1230AB-IND DS1230ABP-IND DS1230Y-IND
Description Non-Volatile SRAM Module, 32KX8, 70ns, CMOS, Non-Volatile SRAM Module, 32KX8, 70ns, CMOS, Non-Volatile SRAM Module, 32KX8, 70ns, CMOS, Non-Volatile SRAM Module, 32KX8, 200ns, CMOS, Non-Volatile SRAM Module, 32KX8, 70ns, CMOS, Non-Volatile SRAM Module, 32KX8, 200ns, CMOS,
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Maximum access time 70 ns 70 ns 70 ns 200 ns 70 ns 200 ns
Other features 10 YEARS OF DATA RETENTION PERIOD 10 YEARS OF DATA RETENTION PERIOD 10 YEARS OF DATA RETENTION PERIOD BATTERY BACK-UP 10 YEARS OF DATA RETENTION PERIOD BATTERY BACK-UP
JESD-30 code R-XDMA-N34 R-XDMA-N34 R-XDMA-N34 R-XDMA-N28 R-XDMA-N34 R-XDMA-N28
memory density 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit
Memory IC Type NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE
memory width 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1
Number of terminals 34 34 34 28 34 28
word count 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words
character code 32000 32000 32000 32000 32000 32000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature - - -40 °C -40 °C -40 °C -40 °C
organize 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum supply voltage (Vsup) 5.25 V 5.5 V 5.5 V 5.25 V 5.25 V 5.5 V
Minimum supply voltage (Vsup) 4.75 V 4.5 V 4.5 V 4.75 V 4.75 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Base Number Matches 1 1 1 1 1 -
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