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MPI5010W

Description
50 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size64KB,2 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet Parametric View All

MPI5010W Overview

50 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

MPI5010W Parametric

Parameter NameAttribute value
MakerEDI [Electronic devices inc.]
package instructionR-PUFM-W4
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresUL RECOGNIZED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)45 V
JESD-30 codeR-PUFM-W4
Maximum non-repetitive peak forward current500 A
Number of components4
Phase1
Number of terminals4
Maximum output current50 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
Terminal formWIRE
Terminal locationUPPER
FPI-W MPI-W
MINIBRIDGE
40/50 AMPERES BRIDGE RECTIFIERS
WIRE LEADS FOR PC BOARDS
MOLDED
TEGRALLY
IN
S
HEAT SINK RY LOW
VE
PROVIDE
ESISTANCE
THERMAL R
This mark indicates recognition under the component
program of Underwriters Laboratories, inc.
ELECTRICAL CHARACTERISTICS PER LEG
(at T
A
=25
O
C Unless Otherwise Specified)
SERIES DESIGNATIONS
(See
FPI40-W
MPI40-W
Figure 1)
MPI50-W
UNITS
o
Average Forward Current, I
F
(Av.) TC 55 C
See Figure 3
40
300
20
10
100
40
400
35
10
100
1.2typ.
-55 to +175
50
400
45
10
100
Amps
Amps
Max. Peak Surge Current, I
FSM
(8.3
ms)
See Figure 2
Max. Instantaneous Forward Voltage Drop,
V
F
=1.2V @ IF = Pulse T est:
Pulse Width <300
S.
Duty cycle < 2.0%
Max. D.C. Reverse Current @ PRV and 25
C, I
R
Max. D.C. Reverse Current @ PRV and 100
C, I
R
O
O
Amps
A
A
o
Thermal Resistance, Total Bridge R
0
j-c
-
Storage Temperature Range, T
STG
C/ W
o
C
EDI reserves the right to change these specifications at any time without notice.

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