DPE45128-200M datasheet, PDF - EEWORLD Datasheet

DPE45128-200M: DescriptionEEPROM Module, 512KX8, 200ns, Parallel, CMOS; Categorystorage storage; File Size216KB，8 Pages; ManufacturerB&B Electronics Manufacturing Company

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DPE45128-200M Overview

EEPROM Module, 512KX8, 200ns, Parallel, CMOS

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	B&B Electronics Manufacturing Company
package instruction	DIP, DIP48,1.4
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Is Samacsys	N
Maximum access time	200 ns
Other features	DATA RETENTION = 10 YEARS; AUTOMATIC WRITE
Data polling	YES
Data retention time - minimum	10
JESD-30 code	R-XDMA-T48
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	EEPROM MODULE
memory width	8
Number of functions	1
Number of terminals	48
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX8
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIP
Encapsulate equivalent code	DIP48,1.4
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
page size	64 words
Parallel/Serial	PARALLEL
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum standby current	0.008 A
Maximum slew rate	0.175 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
switch bit	NO
Base Number Matches	1

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