LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
3
COLLECTOR
2SA1037AK*LT1
3
1
BASE
2
EMITTER
1
2
CASE 318–08, STYLE 6
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CEO
V
CBO
V
EBO
SOT– 23 (TO–236AB)
Value
–50
–60
–6.0
–150
0.2
150
-55 ~+150
Unit
V
V
V
mAdc
W
°C
°C
I
C
P
C
T
j
T
stg
DEVICE MARKING
2SA1037AK*LT1 =G3F
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(I
C
= –1 mA)
Emitter–Base Breakdown Voltage
(I
E
= – 50
µA)
Collector–Base Breakdown Voltage
(I
C
= – 50
µA)
Collector Cutoff Current
(V
CB
= – 60 V)
Emitter cutoff current
(V
EB
= – 6 V)
Collector-emitter saturation voltage
(I
C
/ I
B
= – 50 mA / – 5m A)
DC current transfer ratio
(V
CE
= – 6 V, I
C
= –1mA)
Transition frequency
(V
CE
= – 12 V, I
E
= 2mA, f=30MHz )
Output capacitance
(V
CB
= – 12 V, I
E
= 0A, f =1MHz )
Symbol
V
(BR)CEO
Min
– 50
–6
– 60
—
—
—
120
—
—
Typ
—
—
—
—
—
—
––
140
4.0
Max
—
—
—
– 0.1
– 0.1
-0.5
560
––
5.0
Unit
V
V
V
µA
µA
V
––
MHz
pF
V
(BR)EBO
V
(BR)CBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
h
FE
values are classified as follows:
hFE
*
Q
120~270
R
180~390
S
270~560
M35–1/3
LESHAN RADIO COMPANY, LTD.
2SA1037AK*LT1
Fig.1 Grounded emitter propagation characteristics
–50
Fig.2 Grounded emitter output characteristics( )
–10
–35.0
T
A
= 25°C
–31.5
–28.0
–24.5
–20
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
T
A
= 100°C
25°C
– 40°C
V
CE
= –10 V
–8
–10
–50
–6
–21.0
–17.5
–2
–1
–4
–14.0
–10.5
–0.5
–2
–7.0
–3.5µA
–0.2
–0.1
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1.6
0
0
–0.4
–0.8
–1.2
–1.6
I
B
=0
–2.0
V
BE
, BASE TO EMITTER VOLTAGE(V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Fig.3 Grounded emitter output characteristics( )
–100
Fig.4 DC current gain vs. collector current ( )
500
T
A
= 25°C
I
C
, COLLECTOR CURRENT (mA)
–80
T
A
= 25°C
h
FE
, DC CURRENT GAIN
–60
500
450
400
350
300
V
CE
= –5 V
–3V
–1V
200
–250
–200
–40
–150
–100
100
–20
–50
µA
I
B
=0
0
–1
–2
–3
–4
–5
50
0
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (mA)
Fig.5 DC current gain vs. collector current ( )
V
CE(sat)
, COLLECTOR SATURATION VOLTAGE(V)
Fig.6 Collector-emitter saturation voltage vs.
collector current ( )
500
–1
T
A
= 100°C
25°C
T
A
= 25°C
–0.5
h
FE
, DC CURRENT GAIN
–40°C
200
–0.2
I
C
/I
B
= 50
–0.1
100
20
10
50
–0.05
V
CE
= – 6V
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
M35–2/3
LESHAN RADIO COMPANY, LTD.
2SA1037AK*LT1
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
V
CE(sat)
, COLLECTOR SATURATION VOLTAGE(V)
–1
Fig.8 Gain bandwidth product vs. emitter current
1000
I
C
/I
B
= 10
f
r
, TRANSITION FREQUENCY(MHz)
500
T
A
= 25°C
V
CE
= –12V
–0.5
–0.2
200
–0.1
T
A
= 100°C
25°C
–40°C
100
–0.05
50
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
–0.2
–0.5
–1
–2
–5
–10
–20
–50
–100
I
C
, COLLECTOR CURRENT (mA)
I
E
, EMITTER CURRENT (mA)
Fig.9 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
C
ob
, COLLECTOR OUTPUT CAPACITANCE( pF)
C
ib
, EMITTER INPUT CAPACITANCE (pF)
20
C
ib
10
T
A
= 25°C
f =1MHz
I
E
= 0A
I
C
= 0A
C
ob
5
2
–0.5
–1
–2
–5
–10
–20
V
CB
, COLLECTOR TO BASE VOLTAGE (V)
V
EB
, EMITTER TO BASE VOLTAGE (V)
M35–3/3
Power technology
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