VISHAY
BC327 / BC328
Vishay Semiconductors
Small Signal Transistors (PNP)
Features
• PNP Silicon Epitaxial Planar Transistors for
switching and amplifier applications. Especially
suitable for AF-driver stages and low-power output
stages.
• These types are also available subdivided into
three groups, -16, -25, and -40, according to their
DC current gain. As complementary types, the
NPN transistors BC337 and BC338 are recom-
mended.
2
B
1
2
3
C 1
18979
E 3
Mechanical Data
Case:
TO-92 Plastic Package
Weight:
approx. 177 mg
Packaging Codes/Options:
BULK / 5 k per container 20 k/box
TAP / 4 k per Ammopack 20 k/box
Parts Table
Part
BC327-16
BC327-25
BC327-40
BC328-16
BC328-25
BC328-40
Type differentiation
h
FE
, typ. 160 @ 100 mA
h
FE
, typ. 250 @ 100 mA
h
FE
, typ. 400 @ 100 mA
h
FE
, typ. 130 @ 300 mA
h
FE
, typ. 200 @ 300 mA
h
FE
, typ. 320 @ 300 mA
Ordering code
BC327-16-BULK or BC327-16-TAP
BC327-25-BULK or BC327-25-TAP
BC327-40-BULK or BC327-40-TAP
BC328-16-BULK or BC328-16-TAP
BC328-25-BULK or BC328-25-TAP
BC328-40-BULK or BC328-40-TAP
Remarks
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector - emitter voltage
Test condition
Part
BC327
BC328
BC327
BC328
Emitter - base voltage
Collector current
Peak collector current
Base current
Power dissipation
1)
Symbol
- V
CES
- V
CES
- V
CEO
- V
CEO
- V
EBO
- I
C
- I
CM
- I
B
Value
50
30
45
25
5
800
1
100
625
1)
Unit
V
V
V
V
V
mA
A
mA
mW
T
amb
= 25 °C
P
tot
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Document Number 85132
Rev. 1.4, 19-May-04
www.vishay.com
1
BC327 / BC328
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1)
VISHAY
Test condition
Symbol
R
θJA
T
j
T
S
Value
200
1)
150
- 65 to + 150
Unit
°C/W
°C
°C
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Electrical DC Characteristics
Parameter
DC current gain
(current gain grup - 16)
DC current gain
(current gain grup - 25)
DC current gain
(current gain grup - 40)
DC current gain
(current gain grup - 16)
DC current gain
(current gain grup - 25)
DC current gain
(current gain grup - 40)
Test condition
- V
CE
= 1 V, - I
C
= 100 mA
- V
CE
= 1 V, - I
C
= 100 mA
- V
CE
= 1 V, - I
C
= 100 mA
- V
CE
= 1 V, - I
C
= 300 mA
- V
CE
= 1 V, - I
C
= 300 mA
- V
CE
= 1 V, - I
C
= 300 mA
Part
BC327-16
BC327-25
BC327-40
BC328-16
BC328-25
BC328-40
BC327
BC328
BC327
BC328
Symbol
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
- I
CES
- I
CES
- I
CES
- I
CES
- V
CEsat
- V
BE
BC327
BC328
- I
C
= 0.1 mA
Emitter - base breakdown
voltage
- I
E
= 0.1 mA
BC327
BC328
- V
(BR)CEO
- V
(BR)CEO
- V
(BR)CEO
- V
(BR)CES
- V
(BR)EBO
45
25
50
30
5
Min
100
160
250
60
100
170
Typ
160
250
400
130
200
320
2
2
100
100
10
10
0.7
1.2
Max
250
400
630
Unit
V
V
V
V
V
V
nA
nA
µA
µA
V
V
V
V
V
V
V
Collector - emitter cutoff current - V
CE
= 45 V
- V
CE
= 25 V
- V
CE
= 45 V, T
amb
= 125 °C
- V
CE
= 25 V, T
amb
= 125 °C
Collector saturation voltage
Base - emitter voltage
Collector - emitter breakdown
voltage
- I
C
= 500 mA, - I
B
= 50 mA
- V
CE
= 1 V, - I
C
= 300 mA
- I
C
= 10 mA
Electrical AC Characteristics
Parameter
Gain - bandwidth product
Collector - base capacitance
Test condition
- V
CE
= 5 V, - I
C
= 10 mA,
f = 50 MHz
- V
CB
= 10 V, f = 1 MHz
Symbol
f
T
C
CBO
Min
Typ
100
12
Max
Unit
MHz
pF
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2
Document Number 85132
Rev. 1.4, 19-May-04
VISHAY
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
-I
CES
- Collector-Emitter Cutoff Current ( nA )
P
tot
- Admissible Power Dissipation ( W )
BC327 / BC328
Vishay Semiconductors
1
0.8
0.6
0.4
0.2
0
10000
maximum
1000
typical
100
10
BC 327: -V
CE
= 45 V
BC 328: -V
CE
= 25 V
20 40 60 80 100 120 140 160 180 200
T
amb
- Ambient Temperature (° C )
0
20 40 60 80 100 120 140 160180 200
T
amb
- Ambient Temperature (
°C
)
1
0
18878
18845
Fig. 1 Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 Collector-Emitter Cutoff Current vs. Ambient Temperature
r
thA
- Pulse Thermal Resistance (
°
C / W)
10
3
1000
150° C
10
2
0.5
0.2
0.1
10 0.05
0.02
1
0.01
0.005
t
p
h
FE
- DC Current Gain
100
T
amb
= 25
°
C
- 50° C
18847
T
10
-1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
- Pulse Length ( s )
½
= 0
½
= t
p
/T
P
I
10 10
2
18885
10
-V
CE
= 1 V
0.1
10
100
I
C
- Collector Current ( mA )
1
1000
Fig. 2 Pulse Thermal Resistance vs. Pulse Duration
Fig. 5 DC Current Gain vs. Collector Current
1000
-I
C
- Collector Current ( mA )
-I
C
- Collector Current ( mA )
25° C
-50° C
150° C
typical
limits
at T
amb
= 25° C
500
400
300
200
100
0
18879
3.2
2.8
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-I
B
= 0.2 mA
2.4
2
100
10
1
0.1
18877
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
-V
BE
- Base-Emitter Voltage ( V )
0
0.4
0.8
1.2
1.6
2
-V
CE
- Collector Emitter Voltage ( V )
Fig. 3 Collector Current vs. Base-Emitter Voltage
Fig. 6 Common Emitter Collector Characteristics
Document Number 85132
Rev. 1.4, 19-May-04
www.vishay.com
3
BC327 / BC328
Vishay Semiconductors
VISHAY
0.9
0.85
400
300
200
100
0
18880
-V
BEsat
- Base Saturation Voltage ( V )
500
-I
C
- Collector Current ( mA )
2
-I
C
-I
B
1
typical
limits
at T
amb
= 25° C
= 10
0.8
- 50° C
25° C
150° C
0.75
-V
BE
= 0.7 V
0
0.4
0.8
1.2
1.6
2
0
0.1
-V
CE
- Collector Emitter Voltage ( V )
18883
10
100
-I
C
- Collector Current ( mA )
1
1000
Fig. 7 Common Emitter Collector Characteristics
Fig. 10 Base Saturation Voltage vs. Collector Current
100
-I
C
- Collector Current ( mA )
80
60
40
0.3
0.25
0.2
0.15
0.1
f
T
- Gain-Bandwidth Product ( MHz )
0.35
1000
T
amb
= 25
°
f = 20 MHz
-V
CE
= 5 V
1V
100
20
0
18881
-I
B
= 0.05 mA
0
2
4
6
8 10 12 14 16 18 20
10
1
10
100
-I
C
- Collector Current ( mA )
1000
-V
CE
- Collector Emitter Voltage ( V )
18884
Fig. 8 Common Emitter Collector Characteristics
Fig. 11 Gain-Bandwidth Product vs. Collector Current
-V
CEsat
- Collector Saturation Voltage ( V )
0.5
0.4
0.3
0.2
0.1
0
0.1
-I
C
-I
B
typical
limits
at T
amb
= 25° C
= 10
150° C
1
25° C
- 50° C
18882
10
100
-I
C
- Collector Current ( mA )
1000
Fig. 9 Collector Saturation Voltage vs. Collector Current
www.vishay.com
4
Document Number 85132
Rev. 1.4, 19-May-04
VISHAY
Packaging for Radial Taping
BC327 / BC328
Vishay Semiconductors
±1
12.7
±1
±2
0.3
± 0.2
12 ±
0.3
±1
-0.5
9
± 0.5
"H"
Vers. Dim. "H"
FSZ
27 ± 0.5
18
4
± 0.2
5.08
± 0.7
2.54
6.3
± 0.7
12.7
± 0.2
Measure limit over 20 index - holes: ± 1
+ 0.6
- 0.1
0.9 max
18787
Document Number 85132
Rev. 1.4, 19-May-04
www.vishay.com
5
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