EEWORLDEEWORLDEEWORLD

Part Number

Search

SI4926DY-T1

Description
Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
CategoryDiscrete semiconductor    The transistor   
File Size137KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

SI4926DY-T1 Overview

Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SI4926DY-T1 Parametric

Parameter NameAttribute value
MakerVishay
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)5.3 A
Maximum drain-source on-resistance0.022 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee0
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Base Number Matches1
Si4926DY
New Product
Vishay Siliconix
Asymmetrical Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
Channel-1
30
Channel-2
r
DS(on)
(W)
0.022 @ V
GS
= 10 V
0.030 @ V
GS
= 4.5 V
0.0125 @ V
GS
= 10 V
0.017 @ V
GS
= 4.5 V
I
D
(A)
6.3
5.4
10.5
9.0
D
1
D
2
D
2
D
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
1
D
2
D
2
D
2
S
1
N-Channel 1
MOSFET
S
2
N-Channel 2
MOSFET
G
1
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Channel 1
Parameter
P
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Channel 2
10 secs
30
20
Symbol
S b l
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
Steady State
Steady State
Unit
U i
V
6.3
5.4
30
1.3
1.4
0.9
5.3
4.2
10.5
8.5
40
7.5
6.0
A
0.9
1.0
0.64
–55 to 150
2.2
2.4
1.5
1.15
1.25
0.80
W
_C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Channel 1
Parameter
P
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71143
S-00238—Rev. A, 21-Feb-00
www.vishay.com
S
FaxBack 408-970-5600
t
v
10 sec
Steady-State
Steady-State
Channel 2
Typ
43
82
25
Symbol
S b l
R
thJA
R
thJC
Typ
72
100
51
Max
90
125
63
Max
53
100
30
Unit
U i
_C/W
2-1

SI4926DY-T1 Related Products

SI4926DY-T1 SI4926DY-E3 SI4926DY-T1-E3
Description Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8
Maker Vishay Vishay Vishay
package instruction SMALL OUTLINE, R-PDSO-G8 , SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code unknown compliant unknown
Is Samacsys N N N
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
surface mount YES YES YES
Base Number Matches 1 1 1
Parts packaging code SOT - SOT
Contacts 8 - 8
ECCN code EAR99 - EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V - 30 V
Maximum drain current (ID) 5.3 A - 5.3 A
Maximum drain-source on-resistance 0.022 Ω - 0.022 Ω
JESD-30 code R-PDSO-G8 - R-PDSO-G8
JESD-609 code e0 e3 -
Number of components 2 - 2
Number of terminals 8 - 8
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Certification status Not Qualified - Not Qualified
Terminal surface TIN LEAD Matte Tin (Sn) -
Terminal form GULL WING - GULL WING
Terminal location DUAL - DUAL
Transistor component materials SILICON - SILICON
Playing with Zynq Serial 6 - Building a virtual machine and Linux system environment
1 OverviewZynq is not just an FPGA , nor is it just an ARM . Yes, Zynq is an integrated chip that has both FPGA and ARM . As this integrated chip is produced by Xilinx , the FPGA manufacturer , people...
ove学习使我快乐 FPGA/CPLD
Can ppc2003 directly access data in sql2000 server?
After PPC2003 is connected to the LAN via WiFi, can I directly access the data in the SQL2000 server on the server through programming? Some people say that SQL CE must be installed on the PPC, and th...
282767310 Embedded System
Ask an expert a question about STM8 I2C
I was recently adjusting the I2C of STM8 (I didn't want to use simulated I2C), but the I2C didn't work. I don't know what the problem is. The software was written with reference to the I2C EEPROM firm...
ytpen stm32/stm8
Wince interface design issues
[img]http://hi.eeworld.net/attachment/201002/25/1084401_1267079840NeOD.jpg[/img] What software do I need to design such an interface? What method do I use to design this interface? Are all the picture...
ruohanzi Embedded System
What is the difference between C language and microcontroller C language (C51)?
I would like to ask what is the difference between the C language you learned in school and the C language for microcontrollers (C51)? Which one is easier to learn? After learning C language in school...
一诺千金 Programming Basics
[Raspberry Pi 3B+ Review] Open I2C peripheral interface & drive DS3231
[i=s]This post was last edited by donatello1996 on 2018-12-24 00:05[/i] [size=5] This post uses a very simple method to use the Raspberry Pi to communicate with the I2C device. The device is selected ...
donatello1996 Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 721  205  100  783  2344  15  5  3  16  48 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号