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SI4926DY-T1-E3

Description
Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8
CategoryDiscrete semiconductor    The transistor   
File Size137KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

SI4926DY-T1-E3 Overview

Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8

SI4926DY-T1-E3 Parametric

Parameter NameAttribute value
MakerVishay
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)5.3 A
Maximum drain-source on-resistance0.022 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Base Number Matches1
Si4926DY
New Product
Vishay Siliconix
Asymmetrical Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
Channel-1
30
Channel-2
r
DS(on)
(W)
0.022 @ V
GS
= 10 V
0.030 @ V
GS
= 4.5 V
0.0125 @ V
GS
= 10 V
0.017 @ V
GS
= 4.5 V
I
D
(A)
6.3
5.4
10.5
9.0
D
1
D
2
D
2
D
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
1
D
2
D
2
D
2
S
1
N-Channel 1
MOSFET
S
2
N-Channel 2
MOSFET
G
1
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Channel 1
Parameter
P
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Channel 2
10 secs
30
20
Symbol
S b l
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
Steady State
Steady State
Unit
U i
V
6.3
5.4
30
1.3
1.4
0.9
5.3
4.2
10.5
8.5
40
7.5
6.0
A
0.9
1.0
0.64
–55 to 150
2.2
2.4
1.5
1.15
1.25
0.80
W
_C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Channel 1
Parameter
P
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71143
S-00238—Rev. A, 21-Feb-00
www.vishay.com
S
FaxBack 408-970-5600
t
v
10 sec
Steady-State
Steady-State
Channel 2
Typ
43
82
25
Symbol
S b l
R
thJA
R
thJC
Typ
72
100
51
Max
90
125
63
Max
53
100
30
Unit
U i
_C/W
2-1

SI4926DY-T1-E3 Related Products

SI4926DY-T1-E3 SI4926DY-E3 SI4926DY-T1
Description Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Maker Vishay Vishay Vishay
package instruction SMALL OUTLINE, R-PDSO-G8 , SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code unknown compliant unknown
Is Samacsys N N N
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
surface mount YES YES YES
Base Number Matches 1 1 1
Parts packaging code SOT - SOT
Contacts 8 - 8
ECCN code EAR99 - EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE - SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V - 30 V
Maximum drain current (ID) 5.3 A - 5.3 A
Maximum drain-source on-resistance 0.022 Ω - 0.022 Ω
JESD-30 code R-PDSO-G8 - R-PDSO-G8
Number of components 2 - 2
Number of terminals 8 - 8
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Certification status Not Qualified - Not Qualified
Terminal form GULL WING - GULL WING
Terminal location DUAL - DUAL
Transistor component materials SILICON - SILICON
JESD-609 code - e3 e0
Terminal surface - Matte Tin (Sn) TIN LEAD
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