MMSZ2V4ET1 Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
Specification Features
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•
•
•
•
•
•
•
500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range − 2.4 V to 56 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power − 225 W (8
X
20
ms)
Pb−Free Packages are Available
1
Cathode
2
Anode
2
1
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
SOD−123
CASE 425
STYLE 1
260°C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20
ms
(Note 1)
@ T
L
≤
25°C
Total Power Dissipation on FR−5 Board,
(Note 2) @ T
L
= 75°C
Derated above 75°C
Thermal Resistance, Junction−to−Ambient
(Note 3)
Thermal Resistance, Junction−to−Lead
(Note 3)
Junction and Storage Temperature Range
Symbol
P
pk
P
D
500
6.7
R
qJA
R
qJL
T
J
, T
stg
340
150
−55 to +150
mW
mW/°C
°C/W
°C/W
Max
225
Unit
W
MARKING DIAGRAM
xxx = Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
°C
Device
MMSZxxxET1
Package
SOD−123
(Pb−Free)
SOD−123
(Pb−Free)
Shipping
†
3000/Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Nonrepetitive current pulse per Figure 11
2. FR−5 = 3.5 X 1.5 inches, using the ON minimum recommended footprint
3. Thermal Resistance measurement obtained via infrared Scan Method
MMSZxxxET3
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 5
ÂÂ
ÂÂ
ÂÂ
xxx M
G
G
10,000/Tape & Reel
Publication Order Number:
MMSZ2V4ET1/D
MMSZ2V4ET1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10 mA)
V
Z1
(V)
(Notes 4 and 5)
Device
Marking
CL1
CL2
CL3
CL4
CL5
CL6
CL7
CL8
CL9
CM1
CM2
CM3
CM4
CM5
CM6
CM7
CM8
CM9
CN1
CN2
CN3
CN4
CN5
CN6
CN7
@ I
ZT1
= 5 mA
Min
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
Nom
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
Max
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
W
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
Min
1.7
1.9
2.1
2.3
2.7
2.9
3.3
3.7
4.2
4.8
5.6
6.3
6.9
7.6
8.4
9.3
10.2
11.2
12.3
13.7
15.2
16.7
18.7
20.7
22.7
Z
ZT1
(Note 6)
V
Z2
(V)
(Notes 4 and 5)
Z
ZT2
(Note 6)
Max Reverse
Leakage Current
I
R
@ V
R
W
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
mA
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
V
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14
15.4
16.8
@ I
ZT2
= 1 mA
Max
2.1
2.4
2.7
2.9
3.3
3.5
4.0
4.7
5.3
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.0
15.5
17.0
19.0
21.1
23.2
25.5
Device
MMSZ2V4ET1, G
MMSZ2V7ET1, G
MMSZ3V0ET1
MMSZ3V3ET1, G
MMSZ3V6ET1, G
MMSZ3V9ET1, G
MMSZ4V3ET1
MMSZ4V7ET1
MMSZ5V1ET1, G
MMSZ5V6ET1
MMSZ6V2ET1
MMSZ6V8ET1
MMSZ7V5ET1
MMSZ8V2ET1
MMSZ9V1ET1
MMSZ10ET1, G
MMSZ11ET1
MMSZ12ET1, G
MMSZ13ET1
MMSZ15ET1, G
MMSZ16ET1, G
MMSZ18ET1, G
MMSZ20ET1, G
MMSZ22ET1, G
MMSZ24ET1
4. The type numbers shown have a standard tolerance of
±5%
on the nominal Zener Voltage.
5. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
6. Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
I
Z(AC)
= 0.1 I
Z(DC),
with the AC frequency = 1 kHz.
Devices listed in
bold, italic
are ON Semiconductor
Preferred
devices.
Preferred
devices are recommended choices for future use and
best overall value.
* The “G” suffix indicates Pb−Free package available.
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3
MMSZ2V4ET1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10 mA)
V
Z1
(V)
(Notes 7 and 8)
@ I
ZT1
= 2 mA
Min
25.65
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
Nom
27
30
33
36
39
43
47
51
56
Max
28.35
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
W
80
80
80
90
130
150
170
180
200
Z
ZT1
(Note 9)
V
Z2
(V)
(Notes 7 and 8)
@ I
ZT2
= 0.1 mA
Min
25
27.8
30.8
33.8
36.7
39.7
43.7
47.6
51.5
Max
28.9
32
35
38
41
46
50
54
60
Z
ZT2
(Note 9)
@ I
ZT2
=
0.5 mA
W
300
300
325
350
350
375
375
400
425
Max Reverse
Leakage Current
I
R
@ V
R
mA
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
18.9
21
23.1
25.2
27.3
30.1
32.9
35.7
39.2
Device
MMSZ27ET1, G
MMSZ30ET1
MMSZ33ET1
MMSZ36ET1
MMSZ39ET1
MMSZ43ET1, G
MMSZ47ET1
MMSZ51ET1
MMSZ56ET1
Device
Marking
CN8
CN9
CP1
CP2
CP3
CP4
CP5
CP6
CP7
7. The type numbers shown have a standard tolerance of
±5%
on the nominal Zener Voltage.
8. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.
9. Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for
I
Z(AC)
= 0.1 I
Z(DC),
with the AC frequency = 1 kHz.
Devices listed in
bold, italic
are ON Semiconductor
Preferred
devices.
Preferred
devices are recommended choices for future use and
best overall value.
* The “G” suffix indicates Pb−Free package available.
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4
MMSZ2V4ET1 Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
2
1
0
−1
V
Z
@ I
ZT
TYPICAL T
C
VALUES
FOR MMSZ2V4T1 SERIES
100
TYPICAL T
C
VALUES
FOR MMSZ2V4T1 SERIES
θ
VZ , TEMPERATURE COEFFICIENT (mV/ C)
°
θ
VZ , TEMPERATURE COEFFICIENT (mV/ C)
°
V
Z
@ I
ZT
10
−2
1−3
2
3
4
5
6
7
8
9
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
11
12
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
Figure 1. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
Ppk, PEAK SURGE POWER (WATTS)
1.2
P D, POWER DISSIPATION (WATTS)
1.0
0.8
0.6
0.4
0.2
0
P
D
versus T
L
1000
RECTANGULAR
WAVEFORM, T
A
= 25°C
100
P
D
versus T
A
10
0
25
50
75
100
T, TEMPERATURE (°C)
125
150
1
0.1
1
10
100
PW, PULSE WIDTH (ms)
1000
Figure 3. Steady State Power Derating
Figure 4. Maximum Nonrepetitive Surge Power
1000
Z ZT, DYNAMIC IMPEDANCE (
Ω
)
T
J
= 25°C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
1000
IF, FORWARD CURRENT (mA)
75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)
I
Z
= 1 mA
5 mA
20 mA
10
100
100
10
150°C
1
0.4
25°C
0°C
75°C
0.6
0.7
0.8
0.9
1.0
V
F
, FORWARD VOLTAGE (V)
1.1
1.2
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE
100
0.5
Figure 5. Effect of Zener Voltage on
Zener Impedance
Figure 6. Typical Forward Voltage
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