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MMDF2C03HD

Description
Power MOSFET 2 Amps, 30 Volts Complementary SO-8, Dual
File Size149KB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MMDF2C03HD Overview

Power MOSFET 2 Amps, 30 Volts Complementary SO-8, Dual

MMDF2C03HD
Power MOSFET
2 Amps, 30 Volts
These miniature surface mount MOSFETs feature ultra low R
DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain-to-source diode has a very low reverse recovery time. These
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc-dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Features
Complementary SO−8, Dual
http://onsemi.com
2 AMPERES, 30 VOLTS
R
DS(on)
= 70 mW (N-Channel)
R
DS(on)
= 200 mW (P-Channel)
N−Channel
D
P−Channel
D
Ultra Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive
Can Be Driven by Logic ICs
Miniature SO-8 Surface Mount Package
Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SO-8 Package Provided
This is a Pb−Free Device
Rating
Symbol
V
DSS
V
GS
N−Channel
P−Channel
N−Channel
P−Channel
I
D
I
DM
T
J
, T
stg
P
D
R
qJA
E
AS
324
324
T
L
260
°C
Value
30
±
20
4.1
3.0
21
15
55 to 150
2.0
62.5
Unit
Vdc
Vdc
A
G
S
G
S
MARKING
DIAGRAM
8
8
1
SO−8
CASE 751
STYLE 14
1
D2C03
AYWWG
G
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted) (Note 1)
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current
Continuous
Drain Current
Pulsed
D2C03 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Operating and Storage Temperature Range
Total Power Dissipation @ T
A
= 25°C (Note 2)
Thermal Resistance, Junction−to−Ambient
(Note 2)
Single Pulse Drain−to−Source Avalanche
Energy
Starting T
J
= 25°C
(V
DD
= 30 V, V
GS
= 5.0 V, Peak I
L
= 9.0 Apk,
L = 8.0 mH, R
G
= 25
W)
N−Channel
(V
DD
= 30 V, V
GS
= 5.0 V, Peak I
L
= 6.0 Apk,
L = 18 mH, R
G
= 25
W)
P−Channel
Max Lead Temperature for Soldering, 0.0625″
from case. Time in Solder Bath is 10 seconds
°C
W
°C/W
mJ
PIN ASSIGNMENT
N−Source
N−Gate
P−Source
P−Gate
1
2
3
4
8
7
6
5
N−Drain
N−Drain
P−Drain
P−Drain
ORDERING INFORMATION
Device
MMDF2C03HDR2G
Package
Shipping
SO−8
2500 Tape & Reel
(Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Negative signs for P−Channel device omitted for clarity.
2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with
one die operating, 10 sec. max.
©
Semiconductor Components Industries, LLC, 2011
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
October, 2011
Rev. 8
1
Publication Order Number:
MMDF2C03HD/D
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