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MMBT5551L-B-AE3-C-R

Description
600 mA, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size48KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric View All

MMBT5551L-B-AE3-C-R Overview

600 mA, NPN, Si, SMALL SIGNAL TRANSISTOR

MMBT5551L-B-AE3-C-R Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.6000 A
Processing package descriptionSOT-23, 3 PIN
stateCONSULT MFR
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
Transistor component materialssilicon
Maximum ambient power consumption0.2250 W
Transistor typeUniversal small signal
Minimum DC amplification factor80
UNISONIC TECHNOLOGIES CO., LTD
MMBT5551
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
* High Collector-Emitter Voltage:
V
CEO
=160V
* High current gain
3
1
2
SOT-23
*Pb-free plating product number:MMBT5551L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MMBT5551-x-AE3-6-R MMBT5551L-x-AE3-6-R
Package
SOT-23
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MMBT5551L-x-AE3-6-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Lead Plating
(1) R: Tape Reel
(2) refer to Pin Assignment
(3) AE3: SOT-23
(4) x: refer to Classification of h
FE
(5) L: Lead Free Plating, Blank: Pb/Sn
MARKING
G1
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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