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MMBT4355

Description
PNP General Purpose Amplifier
CategoryDiscrete semiconductor    The transistor   
File Size442KB,10 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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MMBT4355 Overview

PNP General Purpose Amplifier

MMBT4355 Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging code3LD, SOT23, JEDEC TO-236, LOW PROFILE
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)75
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Maximum off time (toff)400 ns
Maximum opening time (tons)100 ns
PN4355 / MMBT4355
PN4355
MMBT4355
C
E
C
B
TO-92
E
SOT-23
Mark: 81
B
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 67. See TN4033A for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
60
60
5
800
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PN4355
625
5.0
83.3
200
Max
*MMBT4355
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
PN4355/MMBT4355, Rev A

MMBT4355 Related Products

MMBT4355 PN4355_01 PN4355
Description PNP General Purpose Amplifier PNP General Purpose Amplifier PNP General Purpose Amplifier
Is it Rohs certified? conform to - conform to
Maker Fairchild - Fairchild
package instruction SMALL OUTLINE, R-PDSO-G3 - CYLINDRICAL, O-PBCY-T3
Reach Compliance Code compli - unknow
ECCN code EAR99 - EAR99
Maximum collector current (IC) 0.8 A - 0.8 A
Collector-emitter maximum voltage 60 V - 60 V
Configuration SINGLE - SINGLE
Minimum DC current gain (hFE) 75 - 75
JESD-30 code R-PDSO-G3 - O-PBCY-T3
JESD-609 code e3 - e3
Number of components 1 - 1
Number of terminals 3 - 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - ROUND
Package form SMALL OUTLINE - CYLINDRICAL
Peak Reflow Temperature (Celsius) 260 - NOT APPLICABLE
Polarity/channel type PNP - PNP
Maximum power dissipation(Abs) 0.35 W - 0.6 W
Certification status Not Qualified - Not Qualified
surface mount YES - NO
Terminal surface Matte Tin (Sn) - Matte Tin (Sn)
Terminal form GULL WING - THROUGH-HOLE
Terminal location DUAL - BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED - NOT APPLICABLE
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
Nominal transition frequency (fT) 100 MHz - 100 MHz
Maximum off time (toff) 400 ns - 400 ns
Maximum opening time (tons) 100 ns - 100 ns

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