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MMBT2222LT3

Description
600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
Categorysemiconductor    Discrete semiconductor   
File Size81KB,6 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
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MMBT2222LT3 Overview

600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236

MMBT2222LT3 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum on-time35 ns
Maximum off time285 ns
Maximum collector current0.6000 A
Maximum Collector-Emitter Voltage30 V
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Transistor typeUniversal small signal
Minimum DC amplification factor75
Rated crossover frequency250 MHz
MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1 is a Preferred Device
General Purpose Transistors
NPN Silicon
Features
http://onsemi.com
COLLECTOR
3
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
MMBT2222LT1
MMBT2222ALT1
Collector −Base Voltage
MMBT2222LT1
MMBT2222ALT1
Emitter −Base Voltage
MMBT2222LT1
MMBT2222ALT1
Collector Current − Continuous
I
C
V
EBO
5.0
6.0
600
mAdc
1
V
CBO
60
75
Vdc
Symbol
V
CEO
30
40
Vdc
Value
Unit
Vdc
1
BASE
2
EMITTER
3
2
SOT−23
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Symbol
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
mW
mW/°C
°C/W
°C
1
xxx M
G
G
556
mW
mW/°C
°C/W
Max
Unit
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0

0.75

0.062 in.
2. Alumina = 0.4

0.3

0.024 in. 99.5% alumina.
xxx = 1P or M1B
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 6
Publication Order Number:
MMBT2222LT1/D

MMBT2222LT3 Related Products

MMBT2222LT3 MMBT2222LT1G MMBT2222LT1 MMBT2222LT1_06 MMBT2222LT3G MMBT2222ALT3G MMBT2222ALT1G MMBT2222ALT3
Description 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 RF SMALL SIGNAL TRANSISTOR 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
state ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
Transistor type Universal small signal Universal small signal RF SMALL SIGNAL Universal small signal Universal small signal Universal small signal Universal small signal Universal small signal
Number of terminals 3 3 - 3 3 3 3 3
Transistor polarity NPN NPN - NPN NPN NPN NPN NPN
Maximum on-time 35 ns 35 ns - 35 ns 35 ns 35 ns 35 ns 35 ns
Maximum off time 285 ns 285 ns - 285 ns 285 ns 285 ns 285 ns 285 ns
Maximum collector current 0.6000 A 0.6000 A - 0.6000 A 0.6000 A 0.6000 A 0.6000 A 0.6000 A
Maximum Collector-Emitter Voltage 30 V 30 V - 30 V 30 V 40 V 40 V 30 V
Processing package description HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN - HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
Lead-free Yes Yes - Yes Yes Yes Yes Yes
EU RoHS regulations Yes Yes - Yes Yes - - Yes
China RoHS regulations Yes Yes - Yes Yes - - Yes
packaging shape Rectangle Rectangle - Rectangle Rectangle Rectangle Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes - Yes Yes Yes Yes Yes
Terminal form GULL WING GULL WING - GULL WING GULL WING GULL WING GULL WING GULL WING
terminal coating MATTE Tin MATTE Tin - MATTE Tin MATTE Tin MATTE Tin MATTE Tin MATTE Tin
Terminal location pair pair - pair pair pair pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy - Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
structure single single - single single single single single
Number of components 1 1 - 1 1 1 1 1
transistor applications switch switch - switch switch switch switch switch
Transistor component materials silicon silicon - silicon silicon silicon silicon silicon
Minimum DC amplification factor 75 75 - 75 75 75 75 75
Rated crossover frequency 250 MHz 250 MHz - 250 MHz 250 MHz 300 MHz 300 MHz 250 MHz
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