MMBT2222ALT1G datasheet, PDF - EEWORLD Datasheet

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MMBT2222ALT1G: Description600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236; Categorysemiconductor Discrete semiconductor; File Size81KB，6 Pages; ManufacturerComchip Technology; Websitehttp://www.comchiptech.com/

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MMBT2222ALT1G Overview

600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236

MMBT2222ALT1G Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum on-time	35 ns
Maximum off time	285 ns
Maximum collector current	0.6000 A
Maximum Collector-Emitter Voltage	40 V
Processing package description	HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
Lead-free	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE Tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Transistor type	Universal small signal
Minimum DC amplification factor	75
Rated crossover frequency	300 MHz

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MMBT2222LT1,

MMBT2222ALT1

MMBT2222ALT1 is a Preferred Device

General Purpose Transistors

NPN Silicon

Features

http://onsemi.com

COLLECTOR

•

Pb−Free Packages are Available

MAXIMUM RATINGS

Rating

Collector −Emitter Voltage

MMBT2222LT1

MMBT2222ALT1

Collector −Base Voltage

MMBT2222LT1

MMBT2222ALT1

Emitter −Base Voltage

MMBT2222LT1

MMBT2222ALT1

Collector Current − Continuous

EBO

5.0

6.0

600

mAdc

CBO

Vdc

Symbol

CEO

Vdc

Value

Unit

Vdc

BASE

EMITTER

SOT−23

CASE 318

STYLE 6

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR− 5 Board

(Note 1) T

= 25°C

Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Total Device Dissipation Alumina

Substrate (Note 2) T

= 25°C

Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature Range

Symbol

225

1.8

qJA

300

2.4

qJA

, T

stg

417

−55 to +150

mW/°C

°C/W

°C

xxx M

556

mW/°C

°C/W

Max

Unit

MARKING DIAGRAM

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−5 = 1.0

0.75

0.062 in.

2. Alumina = 0.4

0.3

0.024 in. 99.5% alumina.

xxx = 1P or M1B

M = Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Preferred

devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

January, 2006 − Rev. 6

Publication Order Number:

MMBT2222LT1/D

MMBT2222ALT1G Related Products

	MMBT2222ALT1G	MMBT2222LT1G	MMBT2222LT1	MMBT2222LT1_06	MMBT2222LT3G	MMBT2222LT3	MMBT2222ALT3G	MMBT2222ALT3
Description	600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	RF SMALL SIGNAL TRANSISTOR	600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236	600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE
Transistor type	Universal small signal	Universal small signal	RF SMALL SIGNAL	Universal small signal	Universal small signal	Universal small signal	Universal small signal	Universal small signal
Number of terminals	3	3	-	3	3	3	3	3
Transistor polarity	NPN	NPN	-	NPN	NPN	NPN	NPN	NPN
Maximum on-time	35 ns	35 ns	-	35 ns	35 ns	35 ns	35 ns	35 ns
Maximum off time	285 ns	285 ns	-	285 ns	285 ns	285 ns	285 ns	285 ns
Maximum collector current	0.6000 A	0.6000 A	-	0.6000 A	0.6000 A	0.6000 A	0.6000 A	0.6000 A
Maximum Collector-Emitter Voltage	40 V	30 V	-	30 V	30 V	30 V	40 V	30 V
Processing package description	HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN	HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN	-	HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN	HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN	HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN	HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN	HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
Lead-free	Yes	Yes	-	Yes	Yes	Yes	Yes	Yes
packaging shape	Rectangle	Rectangle	-	Rectangle	Rectangle	Rectangle	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	-	Yes	Yes	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
terminal coating	MATTE Tin	MATTE Tin	-	MATTE Tin	MATTE Tin	MATTE Tin	MATTE Tin	MATTE Tin
Terminal location	pair	pair	-	pair	pair	pair	pair	pair
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	-	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	single	single	-	single	single	single	single	single
Number of components	1	1	-	1	1	1	1	1
transistor applications	switch	switch	-	switch	switch	switch	switch	switch
Transistor component materials	silicon	silicon	-	silicon	silicon	silicon	silicon	silicon
Minimum DC amplification factor	75	75	-	75	75	75	75	75
Rated crossover frequency	300 MHz	250 MHz	-	250 MHz	250 MHz	250 MHz	300 MHz	250 MHz
EU RoHS regulations	-	Yes	-	Yes	Yes	Yes	-	Yes
China RoHS regulations	-	Yes	-	Yes	Yes	Yes	-	Yes

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