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MMBD4448HTS

Description
0.25 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size60KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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MMBD4448HTS Overview

0.25 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE

Lead-free
MMBD4448HT /HTA /HTC
/HTS
SURFACE MOUNT FAST SWITCHING DIODE
SOT-523
A
Features
·
·
·
·
·
Ultra-Small Surface Mount Package
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
Lead Free/RoHS Compliant (Note 3)
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: See Diagrams Below
Marking: See Diagrams Below & Page 3
Weight: 0.002 grams (approx.)
Ordering Information, see Sheet 2
J
D
L
K
TOP VIEW
B C
Dim
A
B
C
D
G
H
N
M
Min
0.15
0.75
1.45
¾
0.90
1.50
0.00
0.60
0.10
0.10
0.45
Max
0.30
0.85
1.75
¾
1.10
1.70
0.10
0.80
0.30
0.20
0.65
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
¾
Mechanical Data
·
·
·
·
·
·
·
·
·
G
H
J
K
L
M
N
a
All Dimensions in mm
MMBD4448HT Marking: A3
MMBD4448HTA Marking: A6
MMBD4448HTC Marking: A7
MMBD4448HTS Marking: AB
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0s
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
d
R
qJA
T
j
, T
STG
Value
100
80
57
500
250
4.0
2.0
150
833
-65 to +150
Unit
V
V
V
mA
mA
A
mW
°C/W
°C
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Symbol
V
(BR)R
V
F
Min
80
0.62
¾
¾
¾
¾
¾
¾
Max
¾
0.72
0.855
1.0
1.25
100
50
30
25
3.5
4.0
Unit
V
V
nA
mA
mA
nA
pF
ns
Test Condition
I
R
= 2.5mA
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
V
R
= 70V
V
R
= 75V, T
j
= 150°C
V
R
= 25V, T
j
= 150°C
V
R
= 20V
V
R
= 6V, f = 1.0MHz
V
R
= 6V, I
F
= 5mA
Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
I
R
C
T
t
rr
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead
DS30263 Rev. 9 - 2
1 of 3
www.diodes.com
MMBD4448HT /HTA /HTC /HTS
ã
Diodes Incorporated

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