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2SA1745

Description
Small Signal Bipolar Transistor, 0.5A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, ULTRASMALL, MCP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size108KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SA1745 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, ULTRASMALL, MCP, 3 PIN

2SA1745 Parametric

Parameter NameAttribute value
Objectid1481158162
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)400 MHz
VCEsat-Max0.36 V

2SA1745 Related Products

2SA1745 2SC4555
Description Small Signal Bipolar Transistor, 0.5A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, ULTRASMALL, MCP, 3 PIN Low-Frequency General-Purpose Amp Applications
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3
Reach Compliance Code unknown unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 15 V 15 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 70 80
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP NPN
Maximum power dissipation(Abs) 0.15 W 0.15 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 400 MHz 300 MHz
VCEsat-Max 0.36 V 0.3 V
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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