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2SA1795

Description
Switching Power Transistor(-5A PNP)
CategoryDiscrete semiconductor    The transistor   
File Size274KB,8 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
Download Datasheet Parametric View All

2SA1795 Overview

Switching Power Transistor(-5A PNP)

2SA1795 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionEPACK-3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power consumption environment10 W
Maximum power dissipation(Abs)10 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Maximum off time (toff)2000 ns
Maximum opening time (tons)300 ns
VCEsat-Max0.3 V
Base Number Matches1
SHINDENGEN
Switching Power Transistor
LSV Series
2SA1795
(TE5T4)
-5A PNP
OUTLINE DIMENSIONS
Case : E-pack
Unit : mm
RATINGS
●Absolute
Maximum Ratings
Item
Storage Temperature
Junction Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current DC
Collector Current Peak
Base Current DC
Base Current Peak
Total Transistor Dissipation
Symbol
Tstg
Tj
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
T
Conditions
Tc = 25℃
Ratings
-55½150
150
-60
-40
-7
-5
-10
-1.5
-2
10
Ratings
Min -40
Max -0.1
Max -0.1
Max -0.1
Min 70
Max -0.3
Max -1.2
Max
12.5
TYP 50
Max 0.3
Max
1.5
Max 0.5
Unit
V
V
V
A
A
A
A
W
●Electrical
Characteristics (Tc=25℃)
Item
Symbol
Collector to Emitter Sustaining Voltage
V
CEO
(sus)
Collector Cutoff Current
I
CBO
I
CEO
Emitter Cutoff Current
I
EBO
DC Current Gain
h
FE
Collector to Emitter Saturation Voltage
V
CE
(sat)
Base to Emitter Saturation Voltage
V
BE
(sat)
Thermal Resistance
θjc
Transition Frequency
f
T
Turn on Time
ton
Storage Time
Fall Time
Conditions
I
C
= -0.05A
At rated Voltage
At rated Voltage
V
CE
= -2V, I
C
= -2.5A
I
C
= -2.5A
I
B
= -0.13A
Junction to case
V
CE
= -10V, I
C
= -0.5A
I
C
= -2.5A
I
B1
= -0.25A, I
B2
= -0.25A
R
L
=
12Ω,
V
BB2
= -4V
Unit
V
mA
mA
V
V
℃/W
MHz
ts
tf
μs
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
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