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2SA1812

Description
High-voltage Switching Transistor (-400V, -0.5A)
CategoryDiscrete semiconductor    The transistor   
File Size120KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

2SA1812 Overview

High-voltage Switching Transistor (-400V, -0.5A)

2SA1812 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)56
JESD-30 codeR-PSSO-F3
JESD-609 codee2
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SA1812 / 2SA1727 / 2SA1776
Transistors
High-voltage Switching Transistor
( 400V, 0.5A)
2SA1812 / 2SA1727 / 2SA1776
Features
1) High breakdown voltage, BV
CEO
= 400V.
2) Low saturation voltage, typically V
CE (sat)
= 0.3V at I
C
/ I
B
= 100mA / 10mA.
3) High switching speed, typically tf : 1 s at I
C
= 100mA.
4) Wide SOA (safe operating area).
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SA1812
Collector power
dissipation
2SA1727
2SA1776
Junction temperature
Storage temperature
Tj
Tstg
P
C
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
400
400
7
0.5
1.0
0.5
2
1
10
1
150
55 to
+
150
Unit
V
V
V
A (DC)
A (Pulse)
W
W
W
W (Tc 25
°C
)
W
1
2
3
°C
°C
1 Single pulse 2 When mounted on a 40 40 0.7mm ceramic board.
3 When t = 1.7mm and the foil collector area on the PC board is 1cm
2
or greater.
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
Denotes
h
FE
2SA1812
MPT3
PQ
AJ
T100
3000
2SA1727
CPT3
PQ
TL
3000
2SA1776
ATV
PQ
TV2
2500
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current tranfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Cob
t
on
t
stg
t
f
12
18
0.6
2.7
1
82
150
Min.
400
400
7
10
10
270
1
1.2
Typ.
Max.
Unit
V
V
V
A
A
V
V
MHz
pF
s
s
s
I
C
I
C
I
E
V
CB
V
EB
V
CE
I
C
/I
B
I
C
/I
B
V
CB
V
CE
50 A
1mA
50 A
400V
6V
5V , I
C
50mA
100mA / 10mA
100mA / 10mA
5V , I
E
10V , I
E
50mA , f
0A , f
5MHz
1MHz
Conditions
I
C
100mA, R
L
1.5k
I
B1
I
B2
10mA
V
CC
to
150V
Rev.A
1/3

2SA1812 Related Products

2SA1812 A1776 2SA1727 2SA1776
Description High-voltage Switching Transistor (-400V, -0.5A) High-voltage Switching Transistor (-400V, -0.5A) High-voltage Switching Transistor (-400V, -0.5A) High-voltage Switching Transistor (-400V, -0.5A)
Is it Rohs certified? conform to - conform to conform to
Reach Compliance Code compli - compli compli
Maximum collector current (IC) 0.5 A - 0.5 A 1 A
Configuration SINGLE - Single Single
Minimum DC current gain (hFE) 56 - 56 82
JESD-609 code e2 - e2 e1
Polarity/channel type PNP - PNP PNP
Maximum power dissipation(Abs) 2 W - 10 W 1 W
surface mount YES - YES NO
Terminal surface Tin/Copper (Sn/Cu) - Tin/Copper (Sn/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
Base Number Matches 1 - 1 1
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