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ML925B40F-04

Description
2.5Gbps InGaAsP DFB LASER DIODE
CategoryLED optoelectronic/LED    photoelectric   
File Size207KB,3 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

ML925B40F-04 Overview

2.5Gbps InGaAsP DFB LASER DIODE

ML925B40F-04 Parametric

Parameter NameAttribute value
MakerMitsubishi
Reach Compliance Codeunknow
ConfigurationSINGLE WITH BUILT-IN PHOTO DIODE
Maximum forward current0.08 A
Maximum forward voltage1.5 V
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum operating temperature85 °C
Minimum operating temperature
Optoelectronic device typesLASER DIODE
Nominal output power6 mW
peak wavelength1470 nm
Maximum response time1.2e-10 s
Semiconductor materialInGaAsP
shapeROUND
size2 mm
surface mountNO
Maximum threshold current15 mA
MITSUBISHI LASER DIODES
ML9XX40 SERIES
Notice : Some parametric limits are subject to change
2.5Gbps
InGaAsP DFB LASER DIODE
TYPE
NAME
DESCRIPTION
ML925B40F / ML920J40S
ML925J40F / ML920L40S
APPLICATION
·
2.5Gbps long-haul transmission
·
Coarse WDM application
ML9XX40 series are uncooled DFB (Distributed Feedback) laser
diodes for 2.5Gbps transmission emitting light beam at 1470~1610nm.
λ/4
shifted grating structure is employed to obtain excellent SMSR
performance under 2.5Gbps modulation. Furthermore, ML9xx40 can
operate in the wide temperature range from 0
o
C to 85
o
C without any
temperature control. They are well suited for light source in long
distance digital transmission application of coarse WDM.
FEATURES
·
λ/4
shifted grating structure
·
Wide temperature range operation (0
o
C to 85
o
C)
·
High side-mode-suppression-ratio (typical 45dB)
·
High resonance frequency (typical 11GHz)
ABSOLUTE MAXIMUM RATINGS
Symbol
Po
If
V
RL
I
FD
V
RD
Tc
Tstg
Parameter
Output power
Forward current (Laser diode)
Reverse voltage (Laser diode)
Forward current (Photo diode)
Reverse voltage (Photo diode)
Case temperature
Storage temperature
Conditions
CW
---
---
---
---
---
---
Ratings
6
150
2
2
20
0 to +85
-40 to +100
Unit
mW
mA
V
mA
V
ºC
ºC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC)
Symbol
Ith
Parameter
Threshold current
Test conditions
CW
CW
<*1>
Tc=85
ºC
<*2>
CW, Po=5mW
CW, Po=5mW
<*1>
Tc=85
ºC
<*2>
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW <*3>
CW, Po=5mW
CW, Po=5mW, Tc=0 to 85
ºC
2.48832Gbps,Ib=Ith, Ipp=40mA
CW, Po=5mW
CW, Po=5mW
2.48832Gbps,Ib=Ith, Ipp=40mA
2.48832Gbps,Ib=Ith, Ipp=40mA
20%-80%
CW, Po=5mW,VRD=1V,RL=10Ω
V
RD
=5V
V
RD
=5V
Min. Typ. Max.
Unit
---
10
15
mA
---
35
40
---
45
50
---
35
45
mA
---
70
80
---
90
100
---
1.1
1.5
V
0.17 0.22
---
mW/mA
0.15 0.20
---
<*4>,<*5>
nm
35
45
---
dB
---
45
---
---
25
---
deg.
---
---
---
0.1
---
---
30
11
80
---
---
10
---
---
120
1.0
0.1
20
deg.
GHz
ps
mA
µA
pF
Iop
Operation current
Vop
η
λp
SMSR
θ
//
θ
fr
tr,tf
Operating voltage
Slope efficiency
Peak wavelength
Side mode suppression ratio
Side mode suppression ratio(RF)
Beam divergence angle (parallel) <*6>
(perpendicular) <*6>
Resonance frequency
Rise and Fall time <*7>
Monitoring output current (PD)
Im
Dark current (PD)
Id
Ct
Capacitance (PD)
<*1> Applied to ML9xx40-04~09 and -12~17.
<*2> Applied to ML9xx40-10~11 and -18~19.
<*3> Applied to ML925J40F and ML920L40S.
<*6> Beam divergence is not applied to ML925J40F and ML920L40S.
<*7> Except influence of the 18mm lead.
MITSUBISHI
ELECTRIC
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